M27C322-100F6 ,32 Mbit 2Mb x16 UV EPROM and OTP EPROMfeatures a 2 line con-trol function which accommodates the use of mul-tiple memory connection. The ..
M27C322-100F6 ,32 Mbit 2Mb x16 UV EPROM and OTP EPROMapplications where the content is programmedM27C322only one time and erasure is not required, theM2 ..
M27C322-100S1 ,32 MBIT (2MB X16) UV EPROM AND OTP EPROMM27C32232 Mbit (2Mb x16) UV EPROM and OTP EPROM■ 5V ± 10% SUPPLY VOLTAGE in READ OPERATION■ ACCESS ..
M27C322-80F1 ,32 Mbit 2Mb x16 UV EPROM and OTP EPROMM27C32232 Mbit (2Mb x16) UV EPROM and OTP EPROM■ 5V ± 10% SUPPLY VOLTAGE in READ OPERATION■ ACCESS ..
M27C322-80F3 ,32 Mbit 2Mb x16 UV EPROM and OTP EPROMfeatures a 2 line con-trol function which accommodates the use of mul-tiple memory connection. The ..
M27C322-80F6 ,32 Mbit 2Mb x16 UV EPROM and OTP EPROMLogic DiagramDESCRIPTIONThe M27C322 is a 32 Mbit EPROM offered in theUV range (ultra violet erase). ..
M41T80M6TR ,Serial Access RTC with AlarmsFEATURES SUMMARY . . . . . 1Figure 1.
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M27C322-100F3-M27C322-100F6-M27C322-80F1-M27C322-80F3-M27C322-80F6
32 Mbit 2Mb x16 UV EPROM and OTP EPROM
1/13April 2000
M27C32232 Mbit (2Mb x16) UV EPROM and OTP EPROM 5V ± 10% SUPPLY VOLTAGE in READ
OPERATION ACCESS TIME: 80ns WORD-WIDE CONFIGURABLE 32 Mbit MASK ROM REPLACEMENT LOW POWER CONSUMPTION Active Current 50mA at 5MHz Stand-by Current 100μA PROGRAMMING VOLTAGE: 12V ± 0.25V PROGRAMMING TIME: 50μs/word ELECTRONIC SIGNATURE Manufacturer Code: 0020h Device Code: 0034h
DESCRIPTIONThe M27C322 is a 32 Mbit EPROM offered in the
UV range (ultra violet erase). It is ideally suited for
microprocessor systems requiring large data or
program storage. It is organised as 2 MWords of
16 bit. The pin-out is compatible with a 32 Mbit
Mask ROM.
The FDIP42W (window ceramic frit-seal package)
has a transparent lid which allows the user to ex-
pose the chip to ultraviolet light to erase the bit pat-
tern. A new pattern can then be written rapidly to
the device by following the programming proce-
dure.
For applications where the content is programmed
only one time and erasure is not required, the
M27C322 is offered in PDIP42 package.
M27C322from E to output (tELQV). Data is available at the
output after a delay of tGLQV from the falling edge
of GVPP, assuming that E has been low and the
addresses have been stable for at least tAVQV-
tGLQV.
Standby Mode The M27C322 has a standby mode which reduces
the supply current from 50mA to 100μA. The
M27C322 is placed in the standby mode by apply-
ing a CMOS high signal to the E input.When in the
standby mode, the outputs are in a high imped-
ance state, independent of the GVPP input.
Two Line Output Control Because EPROMs are usually used in larger
memory arrays, this product features a 2 line con-
trol function which accommodates the use of mul-
tiple memory connection. The two line control
function allows: the lowest possible memory power dissipation, complete assurance that output bus contention
will not occur.
For the most efficient use of these two control
lines, E should be decoded and used as the prima-
ry device selecting function, while GVPP should be
made a common connection to all devices in the
array and connected to the READ line from the
system control bus. This ensures that all deselect-
ed memory devices are in their low power standby
mode and that the output pins are only active
when data is required from a particular memory
device.
Table 1. Signal Names
DEVICE OPERATIONThe operating modes of the M27C322 are listed in
the Operating Modes Table. A single power supply
is required in the read mode. All inputs are TTL
compatible except for VPP and 12V on A9 for the
Electronic Signature.
Read ModeThe M27C322 has a word-wide organization. Chip
Enable (E) is the power control and should be
used for device selection. Output Enable (G) is the
output control and should be used to gate data to
the output pins independent of device selection.
Assuming that the addresses are stable, the ad-
dress access time (tAVQV) is equal to the delay
3/13
M27C322
Table 2. Absolute Maximum Ratings (1)Note:1. Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may
cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions
above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating condi-
tions for extended periods may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant qual-
ity documents. Minimum DC voltage on Input or Output is –0.5V with possible undershoot to –2.0V for a period less than 20ns. Maximum DC
voltage on Output is VCC +0.5V with possible overshoot to VCC +2V for a period less than 20ns. Depends on range.
Table 3. Operating ModesNote: X = VIH or VIL, VID = 12V ± 0.5V.
Table 4. Electronic SignatureNote: Outputs Q15-Q8 are set to '0'.
M27C322
Table 5. AC Measurement Conditions
Table 6. Capacitance (1) (TA = 25 °C, f = 1 MHz)
Note:1. Sampled only, not 100% tested.
put control and by properly selected decoupling
capacitors. It is recommended that a 0.1μF ceram-
ic capacitor is used on every device between VCC
and VSS. This should be a high frequency type of
low inherent inductance and should be placed as
close as possible to the device. In addition, a
4.7μF electrolytic capacitor should be used be-
tween VCC and VSS for every eight devices. This
capacitor should be mounted near the power sup-
ply connection point. The purpose of this capacitor
is to overcome the voltage drop caused by the in-
ductive effects of PCB traces.
System ConsiderationsThe power switching characteristics of Advanced
CMOS EPROMs require careful decoupling of the
supplies to the devices. The supply current ICC
has three segments of importance to the system
designer: the standby current, the active current
and the transient peaks that are produced by the
falling and rising edges of E. The magnitude of the
transient current peaks is dependent on the ca-
pacitive and inductive loading of the device out-
puts. The associated transient voltage peaks can
be suppressed by complying with the two line out-
5/13
M27C322
Table 7. Read Mode DC Characteristics (1)(TA = 0 to 70 °C, –40 to 85 °C or –40 to 125 °C; VCC = 5V ± 10%; VPP = VCC)
Note:1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP. Maximum DC voltage on Output is VCC +0.5V.
Table 8. Read Mode AC Characteristics (1)(TA = 0 to 70 °C, –40 to 85 °C or –40 to 125 °C; VCC = 5V ± 10%; VPP = VCC)
Note:1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP Sampled only, not 100% tested. Speed obtained with High Speed AC measurement conditions.
M27C322
Table 9. Programming Mode DC Characteristics (1)(TA = 25 °C; VCC = 6.25V ± 0.25V; VPP = 12V ± 0.25V)
Note:1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP.
7/13
M27C322
Table 10. MARGIN MODE AC Characteristics (1)(TA = 25 °C; VCC = 6.25V ± 0.25V; VPP = 12V ± 0.25V)
Note:1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP.
Table 11. Programming Mode AC Characteristics (1)(TA = 25 °C; VCC = 6.25V ± 0.25V; VPP = 12V ± 0.25V)
Note:1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP. Sampled only, not 100% tested.
Programming When delivered (and after each erasure for UV
EPROM), all bits of the M27C322 are in the "1"
state. Data is introduced by selectively program-
ming "0"s into the desired bit locations. Although
only "0"s will be programmed, both "1"s and "0"s
can be present in the data word. The only way to
change a "0" to a "1" is by die exposition to ultravi-
olet light (UV EPROM). The M27C322 is in the
programming mode when VPP input is at 12.V,
GVPP is at VIH and E is pulsed to VIL. The data to
be programmed is applied to 16 bits in parallel to
the data output pins. The levels required for the
address and data inputs are TTL. VCC is specified
to be 6.25V ± 0.25V.
