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M2732A
NMOS 32K (4K x 8) UV EPROM
1/9
NOT FOR NEW DESIGNNovember 2000
M2732ANMOS 32 Kbit (4Kb x 8) UV EPROM FAST ACCESS TIME: 200ns EXTENDED TEMPERATURE RANGE SINGLE 5V SUPPLY VOLTAGE LOW STANDBY CURRENT: 35mA max INPUTS and OUTPUTS TTL COMPATIBLE
DURING READ and PROGRAM COMPLETELY STATIC
DESCRIPTIONThe M2732A is a 32,768 bit UV erasable and elec-
trically programmable memory EPROM. It is orga-
nized as 4,096 words by 8 bits. The M2732A with
its single 5V power supply and with an access time
of 200 ns, is ideal suited for applications where
fast turn around and pattern experimentation are
important requirements.
The M2732A is housed in a 24 pin Window Ce-
ramic Frit-Seal Dual-in-Line package. The trans-
parent lid allows the user to expose the chip to
ultraviolet light to erase the bit pattern. A new pat-
tern can be then written to the device by following
the programming procedure.
Figure 2. DIP Pin Connections
Note: Except for the rating "Operating Temperature Range", stresses above those listed in the Table "Absolute Maximum Ratings" may causepermanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those
indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating conditions for extended periods
may affect device reliability. Refer also to the STMicroelectronics SURE Program and other relevant quality documents.
Table 2. Absolute Maximum Ratings
DEVICE OPERATIONThe six modes of operation for the M2732A are
listed in the Operating Modes Table. A single 5V
power supply is required in the read mode. All
inputs are TTL level except for VPP.
Read ModeThe M2732A has two control functions, both of
which must be logically satisfied in order to obtain
data at the outputs. Chip Enable (E) is the power
control and should be used for device selection.
Output Enable (G) is the output control and should
be used to gate data to the output pins, inde-
pendent of device selection.
Assuming that the addresses are stable, address
access time (tAVAQ) is equal to the delay from E to
output (tELQV). Data is available at the outputs after
the falling edge of G, assuming that E has been low
and the addresses have been stable for at least
tAVQV-tGLQV.
Standby ModeThe M2732A has a standby mode which reduces
the active power current by 70 %, from 125 mA to
35 mA. The M2732A is placed in the standby mode
by applying a TTL high signal to E input. When in
standby mode, the outputs are in a high impedance
state, independent of the GVPP input.
Two Line Output ControlBecause M2732A’s are usually used in larger mem-
ory arrays, this product features a 2 line control
function which accommodates the use of multiple
memory connection. The two line control function
allows:
a. the lowest possible memory power dissipation,
b. complete assurance that output bus contention
will not occur. o most efficiently use these two control lines, it is
recommended that E be decoded and used as the
primary device selecting function, while G should
be made a common connection to all devices in the
array and connected to the READ line from the
system control bus.
This ensures that all deselected memory devices
are in their low power standby mode and that the
output pins are only active when data is required
from a particular memory device.
M2732A
ProgrammingWhen delivered, and after each erasure, all bits of
the M2732A are in the “1" state. Data is introduced
by selectively programming ”0’s" into the desired
bit locations. Although only “0’s” will be pro-
grammed, both “1’s” and “0’s” can be presented in
the data word. The only way to change a “0" to a
”1" is by ultraviolet light erasure.
The M2732A is in the programming mode when the
GVPP input is at 21V. A 0.1μF capacitor must be
placed across GVPP and ground to suppress spu-
rious voltage transients which may damage the
device. The data to be programmed is applied, 8
bits in parallel, to the data output pins. The levels
required for the address and data inputs are TTL.
When the address and data are stable, a 50ms,
active low, TTL program pulse is applied to the E
input. A program pulse must be applied at each
address location to be programmed. Any location
can be programmed at any time - either individually,
sequentially, or at random. The program pulse has
a maximum width of 55ms. The M2732A must not
be programmed with a DC signal applied to the E
input.
Programming of multiple M2732As in parallel with
the same data can be easily accomplished due to
the simplicity of the programming requirements.
Inputs of the paralleled M2732As may be con-
nected together when they are programmed with
the same data. A low level TTL pulse applied to the
E input programs the paralleled 2732As.
Program InhibitProgramming of multiple M2732As in parallel with
different data is also easily accomplished. Except
for E, all like inputs (including GVPP) of the parallel
M2732As may be common. A TTL level program
pulse applied to a M2732A’s E input with GVPP at
21V will program that M2732A. A high level E input
inhibits the other M2732As from being pro-
grammed.
Program VerifyA verify should be performed on the programmed
bits to determine that they were correctly pro-
grammed. The verify is carried out with GVPP and
E at VIL.
ERASURE OPERATIONThe erasure characteristics of the M2732A are
such that erasure begins when the cells are ex-
posed to light with wavelengths shorter than ap-
proximately 4000 Å. It should be noted that sunlight
and certain types of fluorescent lamps have wave-
lengths in the 3000-4000 Å range. Research shows
that constant exposure to room level fluorescent
lighting could erase a typical M2732A in approxi-
mately 3 years, while it would take approximately
1 week to cause erasure when exposed to the
direct sunlight. If the M2732A is to be exposed to
these types of lighting conditions for extended pe-
riods of time, it is suggested that opaque labels be
put over the M2732A window to prevent uninten-
tional erasure.
The recommended erasure procedure for the
M2732A is exposure to shortwave ultraviolet light
which has a wavelength of 2537 Å. The integrated
dose (i.e. UV intensity x exposure time) for erasure
should be a minimum of 15 W-sec/cm2 . The era-
sure time with this dosage is approximately 15 to
20 minutes using an ultraviolet lamp with 12000μW/cm2 power rating. The M2732A should be
placed within 2.5 cm of the lamp tubes during
erasure. Some lamps have a filter on their tubes
which should be removed before erasure.
Note: X = VIH or VIL.
Table 3. Operating Modes
M2732A3/9
Figure 3. AC Testing Input Output WaveformsInput Rise and Fall Times ≤ 20ns
Input Pulse Voltages 0.45V to 2.4V
Input and Output Timing Ref. Voltages 0.8V to 2.0V
AC MEASUREMENT CONDITIONS
Figure 4. AC Testing Load CircuitNote that Output Hi-Z is defined as the point where data
is no longer driven.
Note:1. Sampled only, not 100% tested.
Table 4. Capacitance (1) (TA = 25 °C, f = 1 MHz )
Figure 5. Read Mode AC Waveforms
M2732A
Notes:1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP. Sampled only, not 100% tested.
Table 6. Read Mode AC Characteristics (1)(TA = 0 to 70 °C or –40 to 85 °C; VCC = 5V ± 5% or 5V ± 10%; VPP = VCC)
Note:1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP.
Table 5. Read Mode DC Characteristics (1)(TA = 0 to 70 °C or –40 to 85 °C; VCC = 5V ± 5% or 5V ± 10%; VPP = VCC)
M2732A5/9
Note:1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP.
Table 7. Programming Mode DC Characteristics (1)(TA = 25 °C; VCC = 5V ± 5%; VPP = 21V ± 0.5V)
Note:1. VCC must be applied simultaneously with or before VPP and removed simultaneously or after VPP.
Table 8. Programming Mode AC Characteristics (1)(TA = 25 °C; VCC = 5V ± 5%; VPP = 21V ± 0.5V)
M2732A
