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Partno	Mfg	Dc	Qty	Available	Descript
LYS269-BO \|LYS269BO	lnfineon	N/a	3000	avai	LC SOT-23 LED, Diffused Low Current LED

LYS269-BO ,LC SOT-23 LED, Diffused Low Current LEDfeature of the device: high luminous intensity • Besonderheit des Bauteils: hohe Lichtstärke at low ..
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LYS269-BO
SMT SOT-23 LED Low Current
S269, LYS269, LGS269LC SOT-23 LED, Diffused
Low Current LED
Nicht für Neuentwicklungen / Not for New Designs
2000-03-011OPTO SEMICONDUCTORS
Besondere MerkmaleGehäusetyp: eingefärbtes, diffuses SOT-23
Gehäuse Besonderheit des Bauteils: hohe Lichtstärke
bei kleinen StrömenWellenlänge: 628 nm (super-rot),
590nm(gelb), 570 nm (grün)Abstrahlwinkel: 140°Technologie: GaAsPoptischer Wirkungsgrad: 2 lm/W Gruppierungsparameter: LichtstärkeVerarbeitungsmethode: für alle
SMT-Bestücktechniken geeignetLötmethode: IR Reflow LötenVorbehandlung: nach JEDEC Level 2Gurtung: 8mm Gurt mit 3000/Rolle, ø180mm
oder 12000/Rolle, ø330 mm
Anwendungenoptischer IndikatorHinterleuchtung (LCD, Schalter, Tasten,
Displays, Werbebeleuchtung,
Allgemeinbeleuchtung)
Featurespackage: colored, diffused SOT-23 packagefeature of the device: high luminous intensity
at low currentswavelength: 628 nm (super-red),
590nm(yellow), 570 nm (green)viewing angle: 140°technology: GaAsPoptical efficiency: 2 lm/Wgrouping parameter: luminous intensityassembly methods: suitable for all
SMTassembly methodssoldering methods: IR reflow solderingpreconditioning: acc. to JEDEC Level 2taping: 8mm tape with 3000/reel, ø180mm 12000/reel, ø330 mm
Applicationsoptical indicatorsbacklighting (LCD, switches, keys, displays,
illuminated advertising, general lighting)
2000-03-012OPTO SEMICONDUCTORSS269, LYS269, LGS269
Helligkeitswerte werden mit einer Stromeinprägedauer von 25ms und einer Genauigkeit von ±11%
ermittelt.
Luminous intensity is tested at a current pulse duration of 25ms and an accuracy of ±11%.
S269, LYS269, LGS2692000-03-013OPTO SEMICONDUCTORS
Grenzwerte
Maximum Ratings
2000-03-014OPTO SEMICONDUCTORSS269, LYS269, LGS269
Kennwerte (TA = 25 °C)
Characteristics
S269, LYS269, LGS2692000-03-015OPTO SEMICONDUCTORS
Relative spektrale Emission Irel = f (λ), TA = 25 °C, IF = 2 mA
Relative Spectral Emission
V(λ) = spektrale Augenempfindlichkeit
Standard eye response curve
Abstrahlcharakteristik Irel = f (ϕ)
Radiation Characteristic
S269, LYS269, LGS2692000-03-016OPTO SEMICONDUCTORS
Durchlaßstrom IF = f (VF)
Forward Current
TA = 25 °C
Maximal zulässiger Durchlaßstrom IF = f (T)
Max. Permissible Forward Current
Relative Lichtstärke IV/IV(2 mA) = f (IF)
Relative Luminous Intensity
TA = 25 °C
Relative Lichtstärke IV/IV(25 °C) = f (TA)
Relative Luminous Intensity F = 2 mA

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