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LQW18AN5N6C00D , Chip Inductor (Chip Coil) for High Frequency Horizontal Wire Wound
LQW18AN6N8C00D , Chip Inductor (Chip Coil) for High Frequency Horizontal Wire Wound
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LMX2119M-LMX2119MX
1.9 GHz Power Amplifier
TL/W/12686
LMX2119
GHz
Power
Amplifier
PRELIMINARY
June 1996
LMX2119 1.9 GHz Power Amplifier
General Description
The LMX2119 1.9GHz Power Amplifierisa monolithic, inte-
grated power amplifier suitable foruseinthe Digital Europe- Cordless Telecommunications (DECT) systemaswellas
other mobile telephonyand wireless communications appli-
cations.Itis fabricated usingan advanced Gallium Arsenide
technology that allows single supply (a3V) operation.
The LMX2119 consistsoftwo MESFETs cascadedto pro-
vide 24.5dBof power gain. The output powerat 3.6Vis
a26.5 dBm withan input power levelofa2 dBm.The input
VSWRofthe power amplifier remains constantintheON
and OFF state.
The LMX2119is availableina 16-pin SOIC surface mount
plastic package.
Features Single a3V supply operation ClassA bias; l30% power added efficiency 24.5dB power gain; a26.5 dBm output power 50X input/output impedance 350mA current consumptionat a3.6V
Applications Digital European Cordless Telecommunications (DECT) Portable wireless communications (PCS/PCN, cordless) Wireless local area networks (WLANs) Other wireless communications systems
Functional Block Diagram
TL/W/12686–1
This data sheetcontains thedesignspecifications forproductdevelopment.
Specifications may changein anymannerwithoutnotice.
C1996National SemiconductorCorporation RRD-B30M27/Printed inU.S.A. http://
