LMV721M7NOPB ,10MHz, Low Noise, Low Voltage, and Low Power Operational Amplifier 5-SC70 -40 to 85FEATURES DESCRIPTIONThe LMV721-N (Single) and LMV722 (Dual) are low2• (For Typical, 5 V Supply Valu ..
LMV721M7X ,10MHz, Low Noise, Low Voltage, and Low Power Operational AmplifierElectrical Characteristics+ − + +>Unless otherwise specified, all limits guaranteed for T = 25˚C. V ..
LMV722 ,10MHz, Low Noise, Low Voltage, and Low Power Operational AmplifierApplicationsThe chip is built with National’s advanced SubmicronSilicon-Gate BiCMOS process. The si ..
LMV722IDGKR ,10-MHz Low-Noise Low-Voltage Low-Power Operational Amplifiers 8-VSSOP -40 to 105maximum ratings may cause permanent damage to the device. These are stress ratingsonly, and functio ..
LMV722IDR ,10-MHz Low-Noise Low-Voltage Low-Power Operational Amplifiers 8-SOIC -40 to 105FEATURESLMV721DBV or DCK PACKAGE• Power-Supply Voltage Range: 2.2 V to 5.5 V(TOP VIEW)• Low Supply ..
LMV722IDRG4 ,10-MHz Low-Noise Low-Voltage Low-Power Operational Amplifiers 8-SOIC -40 to 105Electrical CharacteristicsV = 2.2 V, V = GND, V = V /2, V = V /2, and R > 1 MΩ (unless otherwise no ..
LQW15AN10NG00D , Chip Inductor (Chip Coil) for High Frequency Horizontal Wire Wound
LQW15AN10NG00D , Chip Inductor (Chip Coil) for High Frequency Horizontal Wire Wound
LQW15AN10NH00D , Chip Inductor (Chip Coil) for High Frequency Horizontal Wire Wound
LQW15AN10NH00D , Chip Inductor (Chip Coil) for High Frequency Horizontal Wire Wound
LQW15AN12NG00D , Chip Inductor (Chip Coil) for High Frequency Horizontal Wire Wound
LQW15AN12NG00D , Chip Inductor (Chip Coil) for High Frequency Horizontal Wire Wound
LMV721M7NOPB
10MHz, Low Noise, Low Voltage, and Low Power Operational Amplifier
LMV721-N, LMV722-N
www.ti.com SNOS414I –AUGUST 1999–REVISED AUGUST 2013
LMV721-N/LMV722 10MHz, Low Noise, Low Voltage, and Low Power Operational Amplifier
Checkfor Samples: LMV721-N, LMV722-N
1FEATURES DESCRIPTIONThe LMV721-N (Single) and LMV722 (Dual) are low
(For Typical,5V Supply Values; Unless noise, low voltage, and low power op amps, that can
Otherwise Noted) be designed intoa wide rangeof applications. The
• Ensured 2.2V and 5.0V Performance LMV721-N/LMV722 hasa unity gain bandwidthof
Low Supply Current LMV721-N/2 10MHz,a slew rateof 5V/us, anda quiescent current 930uA/amplifierat 2.2V.
930µA/Amplifierat 2.2V High Unity-Gain Bandwidth 10MHz The LMV721-N/722 are designedto provide optimal
performancein low voltage and low noise systems.
• Rail-to-Rail Output Swing They provide rail-to-rail output swing into heavy
– at 600Ω Load 120mV from Either Railat loads. The input common-mode voltage range
2.2V includes ground, and the maximum input offset
at 2kΩ Load 50mV from Either Railat 2.2V voltage are 3.5mV (Over Temp) for the LMV721-
N/LMV722. Their capacitive load capabilityis also
• Input Common Mode Voltage Range Includes goodat low supply voltages. The operating rangeis
Ground from 2.2Vto 5.5V.
• Silicon Dust, SC70-5 Package 2.0x2.0x1.0 mmThe chip is built with TI's advanced Submicron
• Input Voltage Noise9 nV/√Hzatf= 1KHz Silicon-Gate BiCMOS process. The single version,
LMV721-N,is availablein5 pin SOT-23 anda SC70
APPLICATIONS (new) package. The dual version, LMV722, is
Cellular an Cordless Phones availableinan SOIC-8 and VSSOP-8 package.
Active Filter and Buffers Laptops and PDAs Battery Powered Electronics
Typical ApplicationA Battery Microphone Preamplifier ESD protection. The leads shouldbe shorted togetherorthe device placedin conductive foam electrostatic damagetothe MOS gates.