LMC660 ,CMOS Quad Operational Amplifierfeatures rail-to-rail output swing in addition to anaY eI 375 mA/amplifier; independent of Vinput c ..
LMC660AIM ,CMOS Quad Operational AmplifierLMC660 CMOS Quad Operational AmplifierAugust 2000LMC660CMOS Quad Operational Amplifiern Ultra low i ..
LMC660AIM/NOPB ,CMOS Quad Operational Amplifier 14-SOIC -40 to 85Electrical Characteristics+−Unless otherwise specified, all limits ensured for T = 25°C. Boldface l ..
LMC660AIMEP ,CMOS Quad Operational Amplifierfeatures rail-to-rail output swing in addition to ann High voltage gain: 126 dBinput common-mode ra ..
LMC660AIMX ,CMOS Quad Operational AmplifierLMC660 CMOS Quad Operational AmplifierAugust 2000LMC660CMOS Quad Operational Amplifiern Ultra low i ..
LMC660AIMX ,CMOS Quad Operational Amplifierfeatures rail-to-rail output swing in addition to an inputn Low distortion: 0.01% at 10 kHzcommon-m ..
LQG15HS1N5S02D , Chip Inductor (Chip Coil) for High Frequency Multilayer Type
LQG15HS1N8S02D , Chip Inductor (Chip Coil) for High Frequency Multilayer Type
LQG15HS1N8S02D , Chip Inductor (Chip Coil) for High Frequency Multilayer Type
LQG15HS22NJ02D , Chip Inductor (Chip Coil) for High Frequency Multilayer Type
LQG15HS22NJ02D , Chip Inductor (Chip Coil) for High Frequency Multilayer Type
LQG15HS2N0S02D , Chip Inductor (Chip Coil) for High Frequency Multilayer Type
LMC660
CMOS Quad Operational Amplifier
TL/H/8767
LMC660
CMOS
Quad
Operational
Amplifier
January 1995
LMC660
CMOS Quad Operational Amplifier
General Description
The LMC660 CMOS Quad operational amplifieris idealfor
operation froma single supply.It operates from a5Vto
a15Vand features rail-to-rail output swingin additiontoan
input common-mode range that includes ground. Perform-
ance limitations that have plagued CMOS amplifiersinthe
pastarenota problem withthis design. Input VOS, drift,and
broadband noiseas wellas voltage gaininto realistic loadskXand 600X)areall equaltoor better than widelyac-
cepted bipolar equivalents.
This chipis built with National’s advanced Double-PolySili-
con-Gate CMOS process.
Seethe LMC662 datasheetfora dual CMOS operational
amplifierwith these same features.
Features Rail-to-rail output swing Specifiedfor2kXand 600X loads High voltage gain 126dB Low input offset voltage 3mV Low offset voltagedrift 1.3 mV/§C Ultralow input bias current 2fA Input common-mode range includesVb Operating range from a5Vto a15V supplyISSe 375 mA/amplifier; independentofVa Low distortion 0.01%at10 kHz Slew rate 1.1 V/ms Availablein extended temperature range (b40§Cto
a125§C); idealfor automotive applications Availableto Standard Military Drawing specification
Applications High-impedance bufferor preamplifier Precision current-to-voltage converter Long-term integrator Sample-and-Hold circuit Peak detector Medical instrumentation Industrial controls Automotive sensors
Connection Diagram
14-Pin DIP/SO
TL/H/8767–1
Ordering Information
Package
Temperature Range
Drawing
NSC Transport
MediaMilitary Extended Industrial Commercial
b55§Cto a125§C b40§C a125§C b40§Cto a85§C0§Cto a70§C
14-Pin LMC660AMJ/883 J14A RailCeramicDIP
14-Pin LMC660EM LMC660AIM LMC660CM M14A Rail
Small Outline Tapeand Reel
14-Pin LMC660EN LMC660AIN LMC660CN N14A RailMoldedDIP
14-Pin
Side Brazed LMC660AMD D14E Rail
CeramicDIP
C1995National SemiconductorCorporation RRD-B30M75/PrintedinU.S.A.
