LM6261M ,High Speed Operational AmplifierElectrical Characteristics (Continued)= = =The following specifications apply for Supply Voltage ±1 ..
LM6261N ,High Speed Operational AmplifierLM6161/LM6261/LM6361 High Speed Operational AmplifierMay 1999LM6161/LM6261/LM6361High Speed Operati ..
LM6261N ,High Speed Operational AmplifierElectrical Characteristics= = =The following specifications apply for Supply Voltage ±15V, V 0, R ≥ ..
LM6261N ,High Speed Operational AmplifierFeaturesn Sonarn High slew rate 300 V/μsConnection Diagrams10–Lead FlatpakDS009057-13See NS Package ..
LM6261N ,High Speed Operational AmplifierGeneral Descriptionn Low supply current 5 mAThe LM6161 family of high-speed amplifiers exhibits an ..
LM6264 ,High Speed Operational AmplifierApplicationsvices.Thisadvancedjunction-isolatedprocessdelivershighYVideo amplifierspeed performance ..
LP3874-ADJ ,0.8A Fast Ultra Low Dropout Linear RegulatorsapplicationsTypical Application Circuit20074545*See Application Hints 2004 National Semiconductor C ..
LP3874EMP-ADJ ,0.8A Fast Ultra Low Dropout Linear Regulatorsapplications. The LP3874-ADJ is developedn Guaranteed output current of 0.8A DCon a CMOS process wh ..
LP3874EMPX-ADJ ,0.8A Fast Ultra Low Dropout Linear Regulatorsapplications. The LP3874-ADJ is developedn Guaranteed output current of 0.8A DCon a CMOS process wh ..
LP3874EMPX-ADJ NOPB ,0.8A Fast Ultra Low Dropout Linear Regulators 5-SOT-223 -40 to 125FEATURES DESCRIPTIONThe LP3874-ADJ fast ultra low-dropout linear2• Ultra Low Dropout Voltageregulat ..
LP3874ES-1.8 ,0.8A Fast Ultra Low Dropout Linear Regulators
LP3874ES-2.5 ,0.8A Fast Ultra Low Dropout Linear Regulators
LM6261M-LM6261N-LM6361M-LM6361M.-LM6361N-LM6361N.
High Speed Operational Amplifier
LM6161/LM6261/LM6361
High Speed Operational Amplifier
General DescriptionThe LM6161 familyof high-speed amplifiers exhibitsanex-
cellent speed-power productin delivering 300 V/μs and MHz unity gain stability with only5mAof supply current.
Further power savings andapplication convenienceare pos-
sibleby taking advantageof thewidedynamic rangein oper-
ating supply voltage which extendsallthe way downto +5V.
These amplifiersare builtwith National’s VIP™ (VerticallyIn-
tegrated PNP) process which providesfast PNP transistors
thatare true complementstothe alreadyfast NPN devices.
Thisadvanced junction-isolated process delivers high speed
performancewithoutthe needfor complexand expensivedi-
electric isolation.
Features High slewrate 300 V/μs High unity gainfreq 50 MHz Low supply current5mA Fast settling 120nsto 0.1% Low differential gain <0.1% Low differential phase 0.1˚ Wide supply range 4.75Vto32V Stable with unlimited capacitive load Well behaved; easyto apply
Applications Video amplifier High-frequency filter Wide-bandwidth signal conditioning Radar Sonar
Connection Diagrams
Temperature Range Package NSC
DrawingMilitary Industrial Commercial
−55˚C≤
TA≤
+125˚C −25˚C≤
TA≤
+85˚C 0˚C≤
TA≤
+70˚CLM6261N LM6361N 8-Pin N08E
MoldedDIP
LM6161J/883 LM6361J 8-Pin J08A
5962-8962101PA CeramicDIP
LM6261M LM6361M 8-Pin Molded M08A
SurfaceMt.
LM6161WG/883 10-Lead WG10A
5962-8962101XA Ceramic SOIC
LM6161W/883 10-Pin W10A
5962-8962101HA Ceramic Flatpak
VIP™isa trademarkof National SemiconductorCorporation.
10–Lead FlatpakDS009057-13
SeeNS Package Number W10ADS009057-5
SeeNS Package Number J08A,
N08Eor M08AMay 1999
LM6161/LM6261/LM6361
High
Speed
Operational
Amplifier 1999 National Semiconductor Corporation DS009057
