LM5111-1M/NOPB ,Dual 5A Compound Gate Driver 8-SOIC -40 to 125 SNVS300H–JULY 2004–REVISED SEPTEMBER 20165 Device OptionsTable 1. Configuration TablePART NUMBER " ..
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LM5111-1MYX , LM5111 Dual 5A Compound Gate Driver
LM5111-1MYX/NOPB ,Dual 5A Compound Gate Driver 8-MSOP-PowerPAD Features 3 DescriptionThe LM5111 Dual Gate Driver replaces industry1• Independently Drives Two N-Ch ..
LM5112SD ,Tiny 7A MOSFET Gate DriverPin DescriptionPin Name Description Application Information1 IN Non-inverting input pin TTL compati ..
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LP2989IMX-5.0 ,Micropower/Low Noise, 500 mA Ultra Low-Dropout RegulatorLP2989 Micropower/Low Noise, 500 mA Ultra Low-Dropout RegulatorFor Use with Ceramic Output Capacito ..
LP2992AILD-1.8 ,Micropower 250 mA Low-Noise Ultra Low-Dropout Regulator in SOT-23 and LLP Packagesapplications.n Smallest possible size (SOT-23, LLP package)™Using an optimized VIP (Vertically Inte ..
LP2992AILD-1.8 ,Micropower 250 mA Low-Noise Ultra Low-Dropout Regulator in SOT-23 and LLP PackagesFeaturesn Ultra low dropout voltageThe LP2992 is a 250 mA, fixed-output voltage regulatordesigned t ..
LP2992AILD-1.8/NOPB ,Micropower 250 mA Low-Noise Ultra Low-Dropout Regulator 6-WSON -40 to 125Features 3 DescriptionThe LP2992 is a 250-mA, fixed-output voltage1• Input Voltage Range: 2.2 V to ..
LP2992AILD-2.5 ,Micropower 250 mA Low-Noise Ultra Low-Dropout Regulator in SOT-23 and LLP Packagesapplications.n Smallest possible size (SOT-23, LLP package)™Using an optimized VIP (Vertically Inte ..
LP2992AILD-3.3 ,Micropower 250 mA Low-Noise Ultra Low-Dropout Regulator in SOT-23 and LLP PackagesApplicationsabsolute minimum board space.n Cellular PhonePrecision Output: 1% tolerance output volt ..
LM5111-1M/NOPB-LM5111-1MYX/NOPB
Dual 5A Compound Gate Driver
LM5111
INA
0.1 µF
N/C
INA2
VEE3
INB4N/C
OUTA
VCC
OUTB
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Design
LM5111SNVS300H –JULY 2004–REVISED SEPTEMBER 2016
LM5111 Dual 5-A Compound Gate Driver Features Independently Drives Two N-Channel MOSFETs Compound CMOS and Bipolar Outputs Reduce
Output Current Variation 5-A Sink and 3-A Source Current Capability Two Channels canbe Connectedin Parallelto
Double the Drive Current Independent Inputs (TTL Compatible) Fast Propagation Times (25ns Typical) Fast Rise and Fall Times (14ns and12ns Rise
and Fall, Respectively, With 2-nF Load) Availablein Dual Noninverting, Dual Inverting and
Combination Configurations Supply Rail Undervoltage Lockout Protection
(UVLO)ƒ LM5111-4 UVLO Configuredto Drive PFET
through OUT_A and NFET through OUT_B Pin Compatible With Industry Standard Gate
Drivers
Applications Synchronous Rectifier Gate Drivers Switch-mode Power Supply Gate Driver Solenoid and Motor Drivers
DescriptionThe LM5111 Dual Gate Driver replaces industry
standard gate drivers with improved peak output
current and efficiency. Each compound output driver
stage includes MOS and bipolar transistors operating parallel that together sink more than 5-A peak from
capacitive loads. Combining the unique
characteristicsof MOS and bipolar devices reduces
drive current variation with voltage and temperature.
Undervoltage lockout protectionis also provided. The
drivers can be operatedin parallel with inputs and
outputs connected to double the drive current
capability. This device is available in the SOIC
package or the thermally enhanced MSOP-
PowerPAD package.
Device Information(1)(1) Forall available packages, see the orderable addendumat
the endofthe data sheet.
Simplified Application Diagram
