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LM5111-1M-LM5111-1MX
Dual 5A Compound Gate Driver
LM5111
Dual 5A Compound Gate Driver
General DescriptionThe LM5111 Dual Gate Driver replaces industry standard
gate drivers with improved peak output current and effi-
ciency. Each “compound” output driver stage includes MOS
and bipolar transistors operatingin parallel that together sink
more than5A peak from capacitive loads. Combining the
unique characteristicsof MOS and bipolar devices reduces
drive current variation with voltage and temperature. Under-
voltage lockout protectionis also provided. The drivers can operatedin parallel with inputs and outputs connectedto
doublethe drive current capability. This deviceis availablein
the SOIC-8 package.
Features Independently drives two N-Channel MOSFETs Compound CMOS and bipolar outputs reduce output
current variation 5A sink/3A source current capability Two channels canbe connectedin parallelto doublethe
drive current Independent inputs (TTL compatible) Fast propagation times (25ns typical) Fast rise andfall times (14 ns/12ns rise/fall with2nF
load) Availablein dual non-inverting, dual inverting and
combination configurations Supplyrail under-voltage lockout protection Pin compatible with industry standard gate drivers
Typical Applications Synchronous Rectifier Gate Drivers Switch-mode Power Supply Gate Driver Solenoid and Motor Drivers
Package SOIC-8
Pin ConfigurationsSOIC-8
July 2004
LM51
Dual
Compound
Gate
DriverCapability
