LE28C1001M-12 ,1MEG (131072words x 8bits) flash memoryFeatures• Highly reliable 2-layer polysilicon CMOS flashEEPROM process• Read and write operations u ..
LE28C1001T ,1MEG (131072 words x 8 bits) Flash MemoryFeatures• Highly reliable 2-layer polysilicon CMOS flashEEPROM process• Read and write operations u ..
LE28F1101T-40 , 1M(65536words×16bits) Flash EEPROM
LE28F4001CTS ,4M-Bit (512k ?8) Flash EEPROMpin assignments for the 32 leadpower supply. LE28F4001C conforms to JEDEC standardPlastic TSOP pack ..
LE28F4001CTS-12 ,4M-Bit (512k ?8) Flash EEPROMFeaturesCMOS Flash EEPROM Technology Latched Address and DataSingle 5-Volt Read and Write Operation ..
LE28F4001T-15 ,4MEG (524288words x 8bit) flash memorypin assignments, and are pin compatible with industrystandard EPROMs, flash EPROMs, and EEPROMs.The ..
LLS0603-FH12NJ , Multilayer Chip Inductors
LLS0603-FH22NJ , Multilayer Chip Inductors
LLSD101B , SURFACE MOUNT SCHOTTKY BARRIER DIODE
LLSD103A-7 , LM20 2.4V, 10μA, SC70, DSBGA Temperature Sensor
LLV0603-FH2N2S , MULTILAYER CERAMIC CHIP INDUCTOR
LLV0603-FH2N2S , MULTILAYER CERAMIC CHIP INDUCTOR
LE28C1001M-12
