LE25FV051T ,512k (64k word x 8bits) Serial flash EEPROMLE25FV051T3.3V-only 512k-Bit Serial Flash EEPROMPreliminary Specificationsmemory contents within th ..
LE27ABZ ,VERY LOW DROP VOLTAGE REGULATORS WITH INHIBITELECTRICAL CHARACTERISTICS FOR LE15AB (refer to the test circuits, T = 25 C, jC = 0.1 μF, C = 2.2 μ ..
LE28C1001M-12 ,1MEG (131072words x 8bits) flash memoryFeatures• Highly reliable 2-layer polysilicon CMOS flashEEPROM process• Read and write operations u ..
LE28C1001T ,1MEG (131072 words x 8 bits) Flash MemoryFeatures• Highly reliable 2-layer polysilicon CMOS flashEEPROM process• Read and write operations u ..
LE28F1101T-40 , 1M(65536words×16bits) Flash EEPROM
LE28F4001CTS ,4M-Bit (512k ?8) Flash EEPROMpin assignments for the 32 leadpower supply. LE28F4001C conforms to JEDEC standardPlastic TSOP pack ..
LLS0603-FH12NJ , Multilayer Chip Inductors
LLS0603-FH22NJ , Multilayer Chip Inductors
LLSD101B , SURFACE MOUNT SCHOTTKY BARRIER DIODE
LLSD103A-7 , LM20 2.4V, 10μA, SC70, DSBGA Temperature Sensor
LLV0603-FH2N2S , MULTILAYER CERAMIC CHIP INDUCTOR
LLV0603-FH2N2S , MULTILAYER CERAMIC CHIP INDUCTOR
LE25FV051T
