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LCP1511D
PROGRAMMABLE TRANSIENT VOLTAGE SUPPRESSOR FOR SLIC PROTECTION
Application Specific Discretes
A.S.D.
LCP1511DPROGRAMMABLE TRANSIENT VOLTAGE
SUPPRESSOR FOR SLIC PROTECTION
DUAL PROGRAMMABLE TRANSIENT SUP-
PRESSOR.
WIDE NEGATIVE FIRING VOLTAGE RANGE :
VMGL = -80V max.
LOW DYNAMIC SWITCHING VOLTAGES :
VFP and VDGL.
LOW GATE TRIGGERING CURRENT :
IGT = 5mA max.
PEAK PULSE CURRENT :
IPP = 30A for 10/1000μs surge.
HOLDING CURRENT :
IH = 150mA.
FEATURESThis device has been especially designed to pro-
tect subscriber line card interfaces (SLIC) against
transient overvoltages.
Positive overloads are clipped with 2 diodes.
Negative surges are suppressed by 2 thyristors,
their breakdown voltage being referenced to
-VBAT through the gate.
This component presents a very low gate trigge-
ring current (IGT) in order to reduce the current con-
sumption on printed circuit board during the firing
phase.
A particular attention has been given to the internal
wire bonding. The "4-point" configuration ensures
reliable protection, eliminating the overvoltage in-
troduced by the parasitic inductances of the wiring
(Ldi/dt), especially for very fast transients.
DESCRIPTIONFebruary 1998 Ed: 3
SCHEMATIC DIAGRAM
CCITT K20 : 10/700μs1kV
5/310μs 25A
VDE 0433 : 10/700μs2kV
5/310μs 38A (*)
VDE 0878 : 1.2/50μs1.5kV
1/20μs 40A
I3124 : 0.5/700μs1kV
0.2/310μs 25A
FCC part 68 : 2/10μs2.5kV
2/10μs 170A (*)
BELLCORE
TR-NWT-001089 : 2/10μs2.5kV
2/10μs 170A (*)
(*) with series resistors or PTC.
COMPLIES WITH THE FOLLOWING STANDARDS :TM: ASD is trademarks of SGS-THOMSON Microelectronics.
1/7
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C)
Note 1 : Pulse waveform :10/1000μstr=10μstp=1000μs
5/310μstr=5μstp=310μs
2/10μstr=2μstp=10μs
THERMAL RESISTANCE
ELECTRICAL CHARACTERISTICS (Tamb = 25°C)100 tr p t
LCP1511D2/7
APPLICATION NOTE
1 - PARAMETERS RELATED TO THE DIODE LINE/GND (Tamb = 25 °C)
Note 2 : See the functional holding current (IH) test circuit 2.
Note 3 : See test circuit 1 for VDGL.
The oscillations with a time duration lower than 50ns are not taken into account.
2 - PARAMETERS RELATED TO THE PROTECTION THYRISTOR (Tamb = 25°C)
3 - PARAMETERS RELATED TO DIODE AND PROTECTION THYRISTOR (Tamb = 25 °C)In order to take advantage of the "4 point" structure
of the LCP, the TIP and RING lines go across the
device. In such case, the device will eliminate the
overvoltages generated by the parasitic induc-
tances of the wiring (Ldi/dt), especially for very fast
transients.
LCP1511D3/7
FUNCTIONAL HOLDING CURRENT (IH) TEST CIRCUIT 1 : GO-NO GO TEST
TEST CIRCUIT 2 FOR VFP AND VDGL PARAMETERS
LCP1511D4/7
FUNCTIONAL DESCRIPTION
LINE A PROTECTION : For positive surges versus GND, the diode D1
will conduct. For negative surges versus GND, the protection
device P1 will trigger at a voltage fixed by the
-VBAT reference.
LINE B PROTECTION : For surges on line B, the operating mode is the
same, D2 or P2 is activated.
It is recommended to add a capacitor (C=220nF)
close to the gate of the LCP, in order to speed up
the triggering.
1E-2 1E-1 1E+0 1E+1 1E+2 1E+3
(A)TSMSurge peak current versus overload duration.
LCP1511D5/7
APPLICATION CIRCUIT : typical SLIC protection concept
ORDER CODE
MARKING
LCP1511D6/7
