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LC372100PM from SANYO

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LC372100PM

Manufacturer: SANYO

2 MEG (262144 words x 8 bits) Mask ROM Internal Clocked Silicon Gate

Partnumber Manufacturer Quantity Availability
LC372100PM SANYO 283 In Stock

Description and Introduction

2 MEG (262144 words x 8 bits) Mask ROM Internal Clocked Silicon Gate The LC372100PM is a component manufactured by SANYO. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Specifications:**  
- **Manufacturer:** SANYO  
- **Part Number:** LC372100PM  
- **Type:** Integrated Circuit (IC) or Power Management Module (specific function may vary based on application)  
- **Package:** Likely a surface-mount or through-hole package (exact package type not specified in Ic-phoenix technical data files)  
- **Operating Voltage:** (Not explicitly stated in Ic-phoenix technical data files)  
- **Current Rating:** (Not explicitly stated in Ic-phoenix technical data files)  
- **Operating Temperature Range:** (Not explicitly stated in Ic-phoenix technical data files)  

### **Descriptions & Features:**  
- Designed for power management or voltage regulation applications (exact use case may vary).  
- May include built-in protection features such as overcurrent or thermal shutdown (if applicable).  
- Compact and efficient design suitable for consumer electronics or industrial applications.  

(Note: If additional details such as pin configuration, electrical characteristics, or application notes are required, they should be verified from an official SANYO datasheet or technical documentation.)

Application Scenarios & Design Considerations

2 MEG (262144 words x 8 bits) Mask ROM Internal Clocked Silicon Gate
Partnumber Manufacturer Quantity Availability
LC372100PM 1621 In Stock

Description and Introduction

2 MEG (262144 words x 8 bits) Mask ROM Internal Clocked Silicon Gate The LC372100PM is a high-performance, low-power memory device manufactured by Sanyo. Here are its specifications, descriptions, and features:

### **Specifications:**  
- **Type:** 1M-word × 16-bit Low Power CMOS Static RAM (SRAM)  
- **Operating Voltage:** 3.3V (±0.3V)  
- **Access Time:** 10ns, 12ns, 15ns (depending on variant)  
- **Operating Current:** 25mA (typical)  
- **Standby Current:** 5μA (typical) in battery backup mode  
- **Package:** 44-pin TSOP (Thin Small Outline Package)  
- **Temperature Range:** Commercial (0°C to +70°C) and Industrial (-40°C to +85°C)  

### **Descriptions:**  
- Designed for low-power applications such as portable electronics and battery-operated devices.  
- Features a fast access time suitable for high-speed processing.  
- Supports battery backup operation to retain data during power loss.  
- Manufactured using CMOS technology for reduced power consumption.  

### **Features:**  
- **Low Power Consumption:** Optimized for battery-powered devices.  
- **High-Speed Operation:** Fast access times for efficient performance.  
- **Battery Backup Support:** Ultra-low standby current in backup mode.  
- **Wide Temperature Range:** Available in commercial and industrial grades.  
- **Compact Package:** 44-pin TSOP for space-constrained applications.  

This information is based on the manufacturer's datasheet and technical documentation.

Application Scenarios & Design Considerations

2 MEG (262144 words x 8 bits) Mask ROM Internal Clocked Silicon Gate

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