LC35W1000BTS-10U ,Asynchronous Silicon Gate 1M (131,072 words x8 bits) SRAMFeatures1• Low-voltage operation: 2.7 to 3.6 V161.270.4 0.15(0.73)• Wide operating temperature rang ..
LC35W256ET-10W ,256K (32K words x 8 bits) SRAM Control pins: OE and CEFeatures1.270.4• Supply voltage range: 2.7 to 3.6 V• Access time: 100 ns (maximum)SANYO: SOP28D• St ..
LC361000AMLL-70 ,1 MEG (131072 words x 8 bits) SRAMOrdering number: ENXSSSBAsynchronous Silicon Gate CMOS LSILC361000AMLL, ATLL, ARLL-70/1 0No, X 5398 ..
LC361000ATLL ,1 MEG (131072 words X 8 bits) SRAMFeatures70 ns (mar): LC36lUX)AMLL, ATLL, ARLL-70100 ns (max.): LC36lax)AMLL, ATLL, ARLU10 C--""---- ..
LC361000ATLL-10 ,1 MEG (131072 words x 8 bits) SRAMFeatures70 ns (mar): LC36lUX)AMLL, ATLL, ARLL-70100 ns (max.): LC36lax)AMLL, ATLL, ARLU10 C--""---- ..
LC361000ATLL-70 ,1 MEG (131072 words x 8 bits) SRAMPin AssignmentsSOP32 TSOP32 (normal)Atl EN.c. VCC AB A10" Ea“5 A15 At3 1/08“A CE2 us TAD?DEE 1/136A ..
LESD5Z12T1G , Transient Voltage Suppressors for ESD Protection
LESD5Z12T1G , Transient Voltage Suppressors for ESD Protection
LESD5Z5.0T1G , Transient Voltage Suppressors for ESD Protection
LESD9D5.0CT5G , Transient Voltage Suppressors for ESD Protection
LESD9D5.0CT5G , Transient Voltage Suppressors for ESD Protection
LESDA6V1W5T1G , Quad Array for ESD Trotection
LC35W1000BTS-10U
