LC322271M-80 ,2MEG (131072words x 16bit) DRAM fast page mode, byte writeElectrical Characteristics at Ta = 0 to +70°C, V = 5 V ± 10%CCLC322271J, M, TParameter Symbol Condi ..
LC32464M-80 ,256K (65536 words X 4 bits) DRAM Fast Page ModeFeatures. 65536 words K 4 bits configuration.. RAS access time/cycle time/power dissipation256 K (6 ..
LC32464P-80 ,256K (65536 words x 4 bit) DRAM fast page modeBlock DiagramR A S o---- Clock generator No,1 ___-__- (w --C) v C CCAS Cy- 9., Clock generalorNo. 2 ..
LC331632M-12 ,512K (32768 words X 16 bits) Pseudo-SRAMPin AssignmentLC331632M-70/80l10/12Vcc GNDT TColumnaddressbuffer (7)Row addrebuffer (8)Column decod ..
LC331632M-70 ,512K (32768 words X 16 bits) Pseudo-SRAMPin AssignmentLC331632M-70/80l10/12Vcc GNDT TColumnaddressbuffer (7)Row addrebuffer (8)Column decod ..
LC338128M-70 ,1 MEG (131072 words x 8 bit) pseudo-SRAMFeatures. 131072 words x 8 bits configuration. CE access time, COE access time, cycle time, operati ..
LED55CF ,GAAS INFRARED EMITTIN DIODE
LEE-39 ,Circuits - Surface Mount Monolithic Amplifiers
LESD5Z12T1G , Transient Voltage Suppressors for ESD Protection
LESD5Z12T1G , Transient Voltage Suppressors for ESD Protection
LESD5Z5.0T1G , Transient Voltage Suppressors for ESD Protection
LC322271M-80
