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L9925
DMOS DUAL FULL BRIDGE DRIVER
gerTpra'
DMOS DUAL FULL BRIDGE DRIVER
n 2 INDEPENDENTLY CONTROLLED
H-BRIDGES
RDs,0N <0.9Q @ Tamb = 25°C, Vs = 14V
0.8A DC CURRENT WITHOUT HEAT SINK
LOW QUIESCENT MODE " <200pA
THEMAL PROTECTION
CROSS CONDUCTION PROTECTION
SUPPLY VOLTAGE UP TO MN
CMOS COMPATIBLE INPUTS
OUTPUT SHORT-CIRCUIT PROTECTION
DESCRIPTION
The L9925 is a dual full bridge driver for stepper
motor applications. Realized in BCD (Bipolar,
CMOS & DOS) techology, logic circuits, precise
linear blocks and power transistors are combined
to optimize circuit performance and minimize off
chip components. Schmitt triggers are used for all
input stages and are fully compatible with 5V
CMOS logic levels. When both enable signals are
low, the IC is commanded to a low quiescent cur-
rent state and will draw less than 200pA from the
battery.
BLOCK DIAGRAM
ORDERING NUMBER: L9925
The charge pump is integrated on chip; no exter-
nal components are required. Full performance is
maintaned for 9V
6V <tionally but with relaxed performance. Over tem-
perature protection and ESD protection to all pins
ensures relability and reduces system integration
failures.
OUT! VSI
CHARGE
lst FULL BRIDGE T1 T2
GND T'
REGULATOR
2nd FULL BRIDGE
_ OUTS
-l OUT4
099A T423
ABSOLUTE MAXIMUM RATINGS
Absolute Maximum Ratings are those values beyond whih damage to the device may occur. Functional
operation under these condition isn't implied.
For voltages and currents applied externally to the device:
Symbol Parameter Value Unit
Vvsoc Dc Supply Voltage -0.3 to 26 V
stp Supply Voltage Pulse (T s400ms) (1) 40 v
IOUT DC Output Load Current A
IOUT MAX DC Output Current: for VOUT > VVS +0.3V or VOUT < -0.3V :18 A
the internal DMOS reverse and/or substrate diode become
conductive and the applied current should not exceed the
specified limit.
1AN1,2 DC Input Voltage -0.3 to 7 V
VEN Enable Input Voltage -0.3 to 7 V
Tsta, Tj Storage and Junction Temperature -40 to 150 "C
Ptot Total Power Dissipation (Tpins = 80°C) 5 W
(Tamb = 70''C no copper area on PCB) 1.23 W
(Tamb =70°C 80m2 copper area on PCB) 2 W
(1) Device may be overstressed if pulsed simultaneous with short circuit at one or more of the outputs will be present.
PIN CONNECTION
PGND CE 1 V 28 I] NC.
INI CE 2 27 CIC) IN2
EN1 cr 3 26 :13 OUT2
NC. CE 4 25 I] NC.
NC. CE 5 24 3:] NC.
OUT1 CE 6 23 CIC) VSI
GND CE 7 22 :13 GND
GND CE 8 21 33 GND
OUTS CE 9 20 1D VS2
N.C. CE 10 19 CIC) N.C.
tIC. CE 11 18 I] NC.
EN2 CE 12 17 2D OUT4
IN3 CE 13 16 CIC) IN4
PGND CE 14 15 ID N.C.
DBBAT424
THERMAL DATA
Symbol Parameter Value Unit
Tst Thermal Shut-down junction temperature min. 150 ''C
TjTSH Thermal Shut-down thereshold hysteresis typ. 25 "C
Rm j-amb Thermal Resistance Junction-ambient (2) 5O °CNV
Rm j-pins Thermal Resistance Junction-pins 15 °CNV
(2) Wth 6cm2 on board heat sink area
