L6387DTR ,HIGH-VOLTAGE HIGH AND LOW SIDE DRIVERL6387®HIGH-VOLTAGE HIGH AND LOW SIDE DRIVERHIGH VOLTAGE RAIL UP TO 600 VdV/dt IMMUNITY +- 50 V/nsec ..
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L6388D , HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER
L6388D013TR , HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER
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LC3564BM-10 ,64K (8192-word x8-bit) SRAM with NOT OE, NOT CE1, and CE2 Control PinsOrdering number : EN5804ACMOS ICLC3564B, BS, BM, BT-70/1064K (8192-word · 8-bit) SRAM with OE, CE1, ..
LC3564BM-70 ,64K (8192-word x8-bit) SRAM with NOT OE, NOT CE1, and CE2 Control PinsOrdering number : EN5804ACMOS ICLC3564B, BS, BM, BT-70/1064K (8192-word · 8-bit) SRAM with OE, CE1, ..
LC3564BS-10 ,64K (8192-word x8-bit) SRAM with NOT OE, NOT CE1, and CE2 Control PinsOrdering number : EN5804ACMOS ICLC3564B, BS, BM, BT-70/1064K (8192-word · 8-bit) SRAM with OE, CE1, ..
LC3564BS-70 ,64K (8192-word x 8-bit) SRAM with NOT OE, NOT CE1, and CE2 Control PinsOrdering number : EN5804ACMOS ICLC3564B, BS, BM, BT-70/1064K (8192-word · 8-bit) SRAM with OE, CE1, ..
LC3564BT-10 ,64K (8192-word x 8-bit) SRAM with NOT OE, NOT CE1, and CE2 Control PinsOrdering number : EN5804ACMOS ICLC3564B, BS, BM, BT-70/1064K (8192-word · 8-bit) SRAM with OE, CE1, ..
LC3564BT-70 ,64K (8192-word x 8-bit) SRAM with NOT OE, NOT CE1, and CE2 Control PinsOrdering number : EN5804ACMOS ICLC3564B, BS, BM, BT-70/1064K (8192-word · 8-bit) SRAM with OE, CE1, ..
L6387DTR
HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER
gerTpra'
HIGH-VOLTAGE HIGH AND LOW SIDE DRIVER
HIGH VOLTAGE RAIL UP TO 600 V
dV/dt IMMUNITY +- 50 V/nsec IN FULL TEM-
PERATURE RANGE
a DRIVER CURRENT CAPABILITY:
400 mA SOURCE,
650 mA SINK
n SWITCHING TIMES 50/30 nsec RISE/FALL
WITH 1nF LOAD
n CMOS/TTL SCHMITT TRIGGER INPUTS
WITH HYSTERESIS AND PULL DOWN
n INTERNAL BOOTSTRAP DIODE
n OUTPUTS IN PHASE WITH INPUTS
DESCRIPTION
The L6387 is an high-voltage device, manufac-
tured with the BCD"OFF-LINE" technology. It has
a Driver structure that enables to drive inde-
pendent referenced N Channel Power MOS or
isiiii)is, ssiiiiiiii)
$08 Minidip
ORDERING NUMBERS:
L6387D L6387
IGBT. The Upper (Floating) Section is enabled to
work with voltage Rail up to 600V. The Logic In-
puts are CMOS/TTL compatible for ease of inter-
facing with controlling devices.
BLOCK DIAGRAM
BOOTSTRAP DRIVER v
WI - 8 ) boot
J.. Cboot
Vcc 's 3 UV HVG HV
J- 'rr DETECTION - DRIVER j
I - R 7 s''''-"']
2 LEVEL - S
HIN ( _-iirysy- LOGIC " SHIFTER OUT
6 TO LOAD
LIN ( .irys-
DRIVER
DODIN 1 135
May 2001
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
Vout Output Voltage -3 to Vboot - 18 V
Vcc Supply Voltage - 0.3 to +18 V
Vboot Floating Supply Voltage - 1 to 618 V
thg Upper Gate Output Voltage - 1 to Vboot V
Vlvg Lower Gate Output Voltage -0.3 to Vcc +0.3 V
Vi Logic Input Voltage -0.3 to Vcc +0.3 V
dVout/dt Allowed Output Slew Rate 50 V/ns
Ptot Total Power Dissipation (Tj = 85 °C) 750 mW
Tj Junction Temperature 150 ''C
Ts Storage Temperature -50 to 150 ''C
Note: ESD immunity for pins 6, 7 and 8 is guaranteed up to 900V (Human Body Model)
PIN CONNECTION
LIN I: 1 a Cl Vboot
HIN E 2 7 Cl HVG
Vcc I: 3 6 Cl OUT
GND E 4 5 Cl LVG
D97IN517
THERMAL DATA
Symbol Parameter $08 Minidip Unit
Rm j_amb Thermal Resistance Junction to Ambient 150 100 "C/W
PIN DESCRIPTION
N. Name Type Function
1 LIN l Lower Driver Logic Input
2 HIN I Upper Driver Logic Input
3 Vcc l Low Voltage Power Supply
4 GND Ground
5 LVG (*) 0 Low Side Driver Output
6 VOUT 0 Upper Driver Floating Reference
7 HVG (*) 0 High Side Driver Output
8 Vboot Bootstrap Supply Voltage
(*) The circuit guarantees 0.3V maximum on the pin (@ Isink = 10mA). This allows to omit the "bleeder" resistor connected between the gate
and the source of the external MOSFET normally used to hold the pin low.
