L6377D ,0.5A HIGH-SIDE DRIVER INTELLIGENT POWER SWITCHABSOLUTE MAXIMUM RATINGSSymbol Pin Parameter Value UnitSupply Voltage (t < 10ms) 50 VwVs 3Supply Vo ..
L6377D013TR ,0.5A High Side Driver Intelligent Power SwitchAbsolute maximum ratingsSymbol Pin Parameter Value UnitSupply voltage (tw ≤ 10 ms) 50 V V 4sSupply ..
L6377D013TR ,0.5A High Side Driver Intelligent Power SwitchFeatures■ Multipower BCD technology■ 0.5 A output currentSO-14■ 8 to 35 V supply voltage range■ Ext ..
L6377D013TR ,0.5A High Side Driver Intelligent Power SwitchElectrical characteristics . . . . . 54 Input section . . . . . . . 85 Over temperature ..
L6382D5 ,POWER MANAGEMENT UNIT FOR MICROCONTROLLED BALLASTBlock DiagramPFCCIRCUITBOOTSTRAPACCHARGEHVMAINSPUMPSTART-UPREGULATORHBTLDRIVER5VPFC PROTECTIONDRIVE ..
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LC35256D-10 ,Dual Control Pins: OE and CE 256K (32768-word X 8-bit) SRAMOrdering number : EN5823CMOS IC LC35256D-10, LC35256DM, DT-70/10Dual Control Pins: OE and CE256K ( ..
LC35256DM ,Dual Control Pins: OE and CE 256K (32768-word X 8-bit) SRAMElectrical Characteristics at Ta = –40 to +85°C, V = 4.5 to 5.5 VCCRatingsParameter Symbol Conditio ..
LC35256DM-10 ,Dual control pins: OE and CE 256K (32768word x 8bit) SRAMFeatures3187-SOP28D• Supply voltage range: 2.7 to 5.5 V[LC35256DM]— 5-V operation: 5.0 V±10%— 3-V o ..
LC35256DM-70 ,Dual control pins: OE and CE 256K (32768word x 8bit) SRAMOrdering number : EN5823CMOS IC LC35256D-10, LC35256DM, DT-70/10Dual Control Pins: OE and CE256K ( ..
LC35256DT-10 ,Dual Control Pins: OE and CE 256K (32768-word X 8-bit) SRAMFeatures3187-SOP28D• Supply voltage range: 2.7 to 5.5 V[LC35256DM]— 5-V operation: 5.0 V±10%— 3-V o ..
LC35256FM-55U ,55ns; V(cc): 7.0V; V(in): -0.3 to +0.3V; 256K (32768 words x 8 bits) SRAM control pins: OE and CEAbsolute Maximum RatingsParameter Symbol Conditions Ratings UnitMaximum supply voltage V max 7.0 VC ..
L6377D
0.5A HIGH-SIDE DRIVER INTELLIGENT POWER SWITCH
L63770.5A HIGH-SIDE DRIVER
INTELLIGENT POWER SWITCH
0.5 A OUTPUT CURRENT
8 TO 35 V SUPPLY VOLTAGE RANGE
EXTERNALLY PROGRAMMABLE CURRENT
LIMIT
NON-DISSIPATIVE OVER-CURRENT PRO-
TECTION
THERMAL SHUTDOWN
UNDER VOLTAGE LOCKOUT WITH HYS-
TERESYS
DIAGNOSTIC OUTPUT FOR UNDER VOLT-
AGE, OVER TEMPERATURE AND OVER
CURRENT
EXTERNAL ASYNCHRONOUS RESET INPUT
PRESETTABLE DELAY FOR OVERCUR-
RENT DIAGNOSTIC
OPEN GROUND PROTECTION
PROTECTION AGAINST SURGE TRAN-
SIENT (IEC 801-5)
IMMUNITY AGAINST BURST TRANSIENT
(IEC 801-4)
ESD PROTECTION (HUMAN BODY MODEL
±2KV)
DESCRIPTIONThis device is a monolithic Intelligent Power
Switch in Multipower BCD Technology for driving
inductive, capacitive or resistive loads.
Diagnostic for CPU feedback and extensive use
of electrical protections make this device inher-
ently indistructible and suitable for general pur-
pose industrial applications.
BLOCK DIAGRAM
ABSOLUTE MAXIMUM RATINGS
PIN CONNECTION (Top view)
L63772/11
PIN DESCRIPTION
THERMAL DATA
L63773/11
ELECTRICAL CHARACTERISTICS (Vs = 24V; Tj = -25 to 125°C; unless otherwise specified.)
DC OPERATION
L63774/11
AC OPERATION
SOURCE DRAIN NDMOS DIODE
Figure 2: Switching Waveforms
Figure 1: Undervoltage Comparator Hysteresis
L63775/11
INPUT SECTIONAn Input and Asynchronous RESET, both
TTL/CMOS compatible with wide voltage range
and high noise immunity (thanks to a built in hys-
teresis) are available.
OVER TEMPERATURE PROTECTION (OVT)An on-chip Over Temperature Protection providse
an excellent protection of the device in extreme
conditions. Whenever the temperature - meas-
ured on a central portion of the chip- exceeds
Tmax=150 C (typical value) the device is shut off,
and the DIAG output goes LOW.
Normal operation is resumed as the chip tem-
perature (normally after few seconds) falls below
Tmax-Thys= 130 C (typical value). The hysteresis
avoid thats an intermittent behaviour take place.
UNDER VOLTAGE PROTECTION (UV)The supply voltage is expected to range from 8 to
35 V. In this range the device operates correctly.
Below 8 V the overall system has to be consid-
ered not reliable. To avoid any misfunctioning the
supply voltage is continuously monitored to pro-
vide an under voltage protection. As Vs falls be-
low Vsth-Vshys (typically 7.5 V, see fig.1) the
output power MOS is switched off and DIAG out-
put goes LOW. Normal operation is resumed as
soon as Vs exceeds Vsth. The hysteretic behav-
iour prevents intermittent operation at low supply
voltage.
OVER CURRENT OPERATIONIn order to implement a short circuit protection the
output power MOS is driven in linear mode to limit
the output current to the Isc value. This Isc limit is
externally settable by means of an external 1/4 W
resistor connected from Rsc pin and GND. The
value of the resistor must be chosen according to
the following formula:
Isc (A) = 5/Rsc (kohm)
with
5 < Rsc < 30 (kohm)
For
Rsc < 5 (kohm)
Isc is limited to Isc=1.1 A (typical value).
This condition (current limited to the Isc value)
lasts for a Ton time interval, that can be set by
means of a capacitor (Cdon) connected to the ON
DELAY pin according to the following formula:
Ton = 1.28 msec/pFfor
50pF
After the Ton interval has expired the output
power MOS is switched off for the Toff time inter-
val with:
Toff = 64*Ton.
Figure 3: Short Circuit Operation Waveforms
L6377
6/11
