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L3100B-L3100B1
OVERVOLTAGE AND OVERCURRENT PROTECTION FOR TELECOM LINE
Application Specific Discretes
A.S.D.
L3100BL3100B1
DIL8OVERVOLTAGE AND OVERCURRENT
PROTECTION FOR TELECOM LINE
UNIDIRECTIONAL FUNCTION
PROGRAMMABLEBREAKDOWN VOLTAGE TO 265V
PROGRAMMABLECURRENT LIMITATION
FROM50 mA TO 550 mA
HIGH SURGE CURRENT CAPABILITY
IPP= 100A 10/1000μs
FEATURESDedicated to sensitive telecom equipment
protection, this device can provide both voltage
protection and current limitation witha very tight
tolerance.
Its high surge current capabilitymakes the L3100B reliable protection device for very exposed
equipment,or when series resistors are very low.
The breakdownvoltagecan beeasily programmed usingan external zener diode. multiple protection mode can alsobe performed
when using several zener diodes, providing each
line interface withan optimized protection level.
The current limiting functionis achieved with the
useofa resistor between the gateN and the
cathode. The valueof the resistor will determine
thelevelof thedesired current.
DESCRIPTION
CCITTK17- K20 10/700 μs 1.5 kV
5/310 μs38 A
VDE0433 10/700 μs2 kV
5/200 μs50 A
CNET 0.5/700 μs 1.5 kV
0.2/310 μs38 A
COMPLIESWITH THEFOLLOWING STANDARDS:
GateN GateP
Cathode
Anode
SCHEMATIC DIAGRAM 5GateN
GateP
Cathode
Anode
Anode
Anode
Anode
CONNECTION DIAGRAMTM: ASDis trademarksof SGS-THOMSONMicroelectronics.
September 1998 Ed:3A 1/8
Symbol Parameter Value UnitIPP Peak pulse current(see note1) 10/1000μs
8/20μs
ITSM Non repetitivesurge peak on-state
current=10 ms 50 A
Tstg
Storage temperaturerange
Maximumoperating junction temperature40to+ 150 150 °C°C Maximumlead temperaturefor solderingduring 10s 230 °C
ABSOLUTE MAXIMUM RATINGS (Tamb=25 °C)
Symbol Parameter Value UnitRth (j-a) Junction-to-ambient 80 °C/W
THERMAL RESISTANCE
Note1: Pulse waveform 10/1000μs
100PP trp t
L3100B/L3100B12/8
Type
VGN @IGN= 200 mA IGN @VAC= 100V VRGN @IG= 1mA IGP @VAC= 100Vmin. max. min. max. min. max.
V mA mA V mAL3100B/B1 0.6 1.8 30 200 0.7 150
Note1: See thereference testcircuitsfor IH,IBOand VBO parameters.
Note2:VR=5V, F= 1MHz.
OPERATIONWITH GATES
Ipp
IBO
IRM
VRM VBR VBO
Symbol ParameterVRM Stand-off voltage
IRM Reverseleakagecurrent
VBR Breakdownvoltage
VBO Breakovervoltage Holding current
IBO Breakovercurrent
IPP Peak pulse current
VGN Gate voltage
IGN,IGP Triggering gate current
VRGN Reverse gate voltage Capacitance
ELECTRICAL CHARACTERISTICS(Tamb =25°C)
Type
IRM @VRM VBR @IR VBO @IBO IH Cmax. min. max. min. max. min. max.
note1 note1 note2
V V mA V mA mA mA pFL3100B 6
265 1 350 200 500 280 100
L3100B1 6
255 1 350 200 500 210 100
OPERATIONWITHOUT GATE
L3100B/L3100B13/8
REFERENCE TEST CIRCUIT FOR IBO and VBO parameters:
220V
static
relay.
D.U.T VBO
measureIBO
measure =20ms
Transformer
220V/800V
Auto
Transformer
220V/2A
Vout
FUNCTIONAL HOLDING CURRENT (IH) TESTCIRCUIT= GO- NOGOTEST.PBAT=- 48V
Surge generator
D.U.T.
Thisisa GO-NOGO Test which allowsto confirmthe holding current (IH) levelina functionaltest
circuit.
Thistest canbe performedif the reference test circuit can’tbe implemented.
TEST PROCEDURE: Adjust the current levelat theIH valueby short circuiting the AKof the D.U.T. Fire the D.U.T witha surgeCurrent: Ipp= 10A, 10/1000 μs. The D.U.T will come backto the OFF-State withina durationof50 ms max.
TEST PROCEDURE:Pulse Test duration(tp= 20ms): For Bidirectionaldevices= SwitchKis closed For Unidirectional devices= SwitchKis open.
VOUT Selection Devicewith VBO< 200 Volt
-VOUT= 250 VRMS,R1= 140Ω. Device with VBO ≥ 200 Volt
-VOUT= 480 VRMS,R2= 240Ω.
L3100B/L3100B14/8
1E-2 1E-1 1E+0 1E+1 1E+2 1E+30
I (A)TSMF=50Hz initial=25°C
t(s)
Figure1: Surge peak current versus overload
duration.
10 20 30405060700.98
Figure3: Relative variationof breakdown voltage
versus ambient temperature.
110 1000
Figure4: Junction capacitance versus reverse
applied voltage.
1020 304050 60700.7
Figure2: Relative variationof holding current
versus junction temperature.
L3100B/L3100B15/8
Table below gives the toleranceof the limited currentITfor each standardizedresistor value.
The formula (1) has been used with VGN values specifiedat the typical gate current level IGN.
L3100B\B1
PTC HOOK
SPEECH
DIALING
RINGERN
RINGER
APPLICATION CIRCUITOvervoltage Protectionand Current limitation
CURRENT TOLERANCEΩ± 5%)
min
max
L3100B +
LOAD
VGN @IGN
Min. Max. Typ. mA
0.75 0.95 100
L3100B/L3100B16/8
