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KSU213WLFG , Micro Mini Surface Mount Detect Switches
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KST92MTF-KST92-MTF-KST93MTF-KST93-MTF
PNP Epitaxial Silicon Transistor
KST92/93 KST92/93 3 High Voltage Transistor 2 SOT-23 1 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector Base Voltage CBO : KST92 -300 V : KST93 -200 V V Collector-Emitter Voltage CEO : KST92 -300 V : KST93 -200 V V Emitter-Base Voltage -5 V EBO I Collector Current -500 mA C P Collector Power Dissipation 350 mW C T Storage Temperature 150 °C STG R (j-a) Thermal Resistance junction to Ambient 357 °C/W TH • Refer to KSP92/93 for graphs Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units BV Collector-Base Breakdown Voltage I = -100μA, I =0 CBO C E : KST92 -300 V : KST93 -200 V BV * Collector-Emitter Breakdown Voltage I = -1mA, I =0 CEO C B : KST92 -300 V : KST93 -200 V BV Emitter-Base Breakdown Voltage I = -100μA, I =0 -5 V EBO E C I Collector Cut-off Current CBO : KST92 V = -200V, I =0 -0.25 μA CB E : KST93 V = -160V, I =0 -0.25 μA CB E I Emitter Cut-off Current V = -5V, I =0 -0.1 μA EBO EB C h * DC Current Gain V = -10V, I = -1mA 25 FE CE C V = -10V, I = -10mA 40 CE C V = -10V, I = -30mA 25 CE C V (sat) * Collector-Emitter Saturation Voltage I = -20mA, I = -2mA -0.5 V CE C B V (sat) * Base-Emitter Saturation Voltage I = -20mA, I = -2mA -0.9 V BE C B C Output Capacitance ob : KST92 V = -20V, I =0 6 pF CB E : KST93 f=1MHz 8 pF f Current Gain Bandwidth Product V = -20V, I = -10mA 50 MHz T CE C f=100MHz * Pulse Test: PW≤300μs, Duty Cycle≤2% ©2003 Rev. B2, January 2003
