KST92 ,PNP Epitaxial Silicon TransistorKST92/93KST92/933High Voltage Transistor2SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial Si ..
KST92MTF ,PNP Epitaxial Silicon TransistorKST92/93KST92/933High Voltage Transistor2SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial Si ..
KST92MTF ,PNP Epitaxial Silicon TransistorKST92/93KST92/933High Voltage Transistor2SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial Si ..
KST92MTF ,PNP Epitaxial Silicon TransistorKST92/93KST92/933High Voltage Transistor2SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial Si ..
KST92-MTF ,PNP Epitaxial Silicon TransistorKST92/93KST92/933High Voltage Transistor2SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial Si ..
KST92-MTF ,PNP Epitaxial Silicon TransistorKST92/93KST92/933High Voltage Transistor2SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial Si ..
LA2787 ,Surround Audio Devices: Dolby Pro Logic Surround single-chip decoderOrdering number : ENN*7871 Monolithic Linear IC LA2787 Dolby Pro Logic Surround Decoder Overv ..
LA2800N ,Telephone Answering MachineFeatures. Since the basic functions required for telephone answering machine can becontrolled by us ..
LA2805 ,Telephone Answering Machine UseFeatures. Since the LA2805,2805M contains all the functions required for telephone answering machin ..
LA2805M ,Telephone Answering Machine UseFeatures. Since the LA2805,2805M contains all the functions required for telephone answering machin ..
LA2805M ,Telephone Answering Machine UseOrdering number:EN3248CMonolithic Linear ICLA2805,2805MN 0.3248CTelephone Answering Machine UseOver ..
LA2806M ,Signal Processor and Power Amplifier IC for Telephone Answering MachinesOperating Characteristics at Ta = 25°C, V =5V,f=1kHzCCParameter Symbol Conditions min typ max UnitQ ..
KST92
PNP Epitaxial Silicon Transistor
KST92/93 KST92/93 3 High Voltage Transistor 2 SOT-23 1 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector Base Voltage CBO : KST92 -300 V : KST93 -200 V V Collector-Emitter Voltage CEO : KST92 -300 V : KST93 -200 V V Emitter-Base Voltage -5 V EBO I Collector Current -500 mA C P Collector Power Dissipation 350 mW C T Storage Temperature 150 °C STG R (j-a) Thermal Resistance junction to Ambient 357 °C/W TH • Refer to KSP92/93 for graphs Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units BV Collector-Base Breakdown Voltage I = -100μA, I =0 CBO C E : KST92 -300 V : KST93 -200 V BV * Collector-Emitter Breakdown Voltage I = -1mA, I =0 CEO C B : KST92 -300 V : KST93 -200 V BV Emitter-Base Breakdown Voltage I = -100μA, I =0 -5 V EBO E C I Collector Cut-off Current CBO : KST92 V = -200V, I =0 -0.25 μA CB E : KST93 V = -160V, I =0 -0.25 μA CB E I Emitter Cut-off Current V =3V, I =0 -0.1 μA EBO CE C h * DC Current Gain V = -10V, I = -1mA 25 FE CE C V = -10V, I = -10mA 40 CE C V = -10V, I = -30mA 25 CE C V (sat) * Collector-Emitter Saturation Voltage I = -20mA, I = -2mA -0.5 V CE C B V (sat) * Base-Emitter Saturation Voltage I = -20mA, I = -2mA -0.9 V BE C B C Output Capacitance ob : KST92 V = -20V, I =0 6 pF CB E : KST93 f=1MHz 8 pF f Current Gain Bandwidth Product V = -20V, I = -10mA 50 MHz T CE C f=100MHz * Pulse Test: PW≤300μs, Duty Cycle≤2% ©2001 Rev. A1, July 2001
