KST63 ,PNP Epitaxial Silicon TransistorKST63/64KST63/64Darlington Transistor32SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial Sili ..
KST63 ,PNP Epitaxial Silicon TransistorKST63/64KST63/64Darlington Transistor32SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial Sili ..
KST64 ,PNP Epitaxial Silicon TransistorKST63/64KST63/64Darlington Transistor32SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial Sili ..
KST64 ,PNP Epitaxial Silicon TransistorKST63/64KST63/64Darlington Transistor32SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial Sili ..
KST64MTF ,PNP Epitaxial Silicon TransistorKST63/64KST63/64Darlington Transistor32SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial Sili ..
KST92 ,PNP Epitaxial Silicon TransistorKST92/93KST92/933High Voltage Transistor2SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial Si ..
LA2110 ,FM Noise CancellerFeatures • Pilot signal compensation function. • By using in conjunction with PLL FM multiplex ster ..
LA2113 ,FM Noise CancellerOperating Characteristics at Ta = 25˚C, V =12V, See specified Test CircuitCCCs onditions RatingPl a ..
LA2200 ,ARI (Autofahrer Rundfunk Informationen) System for Car Radios-SK TypeOrdering number:EN 1216CMonolithic Linear ICLA2200, 2205ARI (Autofahrer Rundfunk Informationen)Syst ..
LA2205 ,ARI (Autofahrer Rundfunk Informationen) System for Car Radios-SK TypeOrdering number:EN 1216CMonolithic Linear ICLA2200, 2205ARI (Autofahrer Rundfunk Informationen)Syst ..
LA2211 ,ARI System-SK TypeOrdering number: EN 726EMonolithic Linear ICNo.726EARI Syrstem-SK Type _As ICs for Autofahrer Rundf ..
LA2220 ,ARI System For Car Radio(SK Type, Nonadjusting VCO)Operating Characteristics at Ta=25°C,VCC=8V,vin=2OOmv,L+R=851,19kHz pilot=10%,unitVccmax 110 16 vv1 ..
KST63
PNP Epitaxial Silicon Transistor
KST63/64 KST63/64 Darlington Transistor 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage -30 V CBO V Collector-Emitter Voltage -30 V CES V Emitter-Base Voltage -10 V EBO I Collector Current -500 mA C P Collector Power Dissipation 350 mW C T Storage Temperature 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units BV Collector-Emitter Breakdown Voltage I = -100, V =0 -30 V CES C BE I Collector Cut-off Current V = -30V, I =0 -100 nA CBO CE E I Emitter Cut-off Current V = -10V, I =0 -100 nA EBO EB C h * DC Current Gain FE : KST63 V = -5V, I = -10mA 5K CE C : KST64 10K : KST63 V = -5V, I = -100mA 10K CE C : K ST64 20K V (sat) Collector-Emitter Saturation Voltage I = -100mA, I = -0.1mA -1.5 V CE C B V (on) Base-Emitter On Voltage V = -5V, I = -100mA -2.0 V BE CE C f Current Gain Bandwidth Product V = -5V, I = -10mA 125 MHz T CE C f=100MHz * Pulse test: PW≤300μs, Duty Cycle≤2% Marking Code Type KST63 KST64 Mark 2U 2V Marking 2U ©2001 Rev. A1, July 2001
