KST55-MTF ,PNP Epitaxial Silicon TransistorKST55/56KST55/56Driver Transistor• Collector-Emitter Voltage: V = KST55: - 60VCEO 3KST56: - 80V• Co ..
KST56 ,PNP Epitaxial Silicon TransistorKST55/56KST55/56Driver Transistor• Collector-Emitter Voltage: V = KST55: - 60VCEO 3KST56: - 80V• Co ..
KST56 ,PNP Epitaxial Silicon TransistorKST55/56KST55/56Driver Transistor• Collector-Emitter Voltage: V = KST55: - 60VCEO 3KST56: - 80V• Co ..
KST56MTF ,PNP Epitaxial Silicon TransistorKST55/56KST55/56Driver Transistor• Collector-Emitter Voltage: V = KST55: - 60VCEO 3KST56: - 80V• Co ..
KST56MTF ,PNP Epitaxial Silicon TransistorKST55/56KST55/56Driver Transistor• Collector-Emitter Voltage: V = KST55: - 60VCEO 3KST56: - 80V• Co ..
KST56MTF ,PNP Epitaxial Silicon TransistorKST55/56KST55/56Driver Transistor• Collector-Emitter Voltage: V = KST55: - 60VCEO 3KST56: - 80V• Co ..
LA2110 ,FM Noise CancellerFeatures • Pilot signal compensation function. • By using in conjunction with PLL FM multiplex ster ..
LA2113 ,FM Noise CancellerOperating Characteristics at Ta = 25˚C, V =12V, See specified Test CircuitCCCs onditions RatingPl a ..
LA2200 ,ARI (Autofahrer Rundfunk Informationen) System for Car Radios-SK TypeOrdering number:EN 1216CMonolithic Linear ICLA2200, 2205ARI (Autofahrer Rundfunk Informationen)Syst ..
LA2205 ,ARI (Autofahrer Rundfunk Informationen) System for Car Radios-SK TypeOrdering number:EN 1216CMonolithic Linear ICLA2200, 2205ARI (Autofahrer Rundfunk Informationen)Syst ..
LA2211 ,ARI System-SK TypeOrdering number: EN 726EMonolithic Linear ICNo.726EARI Syrstem-SK Type _As ICs for Autofahrer Rundf ..
LA2220 ,ARI System For Car Radio(SK Type, Nonadjusting VCO)Operating Characteristics at Ta=25°C,VCC=8V,vin=2OOmv,L+R=851,19kHz pilot=10%,unitVccmax 110 16 vv1 ..
KST55MTF-KST55-MTF-KST56MTF-KST56-MTF
PNP Epitaxial Silicon Transistor
KST55/56 KST55/56 Driver Transistor • Collector-Emitter Voltage: V = KST55: - 60V CEO 3 KST56: - 80V • Collector Power Dissipation: P (max) = 350mW C • Complement to KST05/06 2 SOT-23 1 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector Base Voltage CBO : KST55 -60 V : KST56 -80 V V Collector-Emitter Voltage CEO : KST55 -60 V : KST56 -80 V V Emitter-Base Voltage -4 V EBO I Collector Current -500 mA C P Collector Power Dissipation 350 mW C T Storage Temperature 150 °C STG R (j-a) Thermal Resistance junction to Ambient 357 °C/W TH Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units BV * Collector-Emitter Breakdown Voltage CEO : KST55 I = -1mA, I =0 -60 V C B : KST56 -80 V BV * Emitter-Base Breakdown Voltage I = -100μA, I =0 -4 V EBO E C I Collector Cut-off Current V = -60V, I =0 -0.1 μA CBO CB E I Collector Cut-off Current CEO : KST55 V = -60V, I =0 -0.1 μA CE B : KST56 V = -80V, I =0 -0.1 μA CE B DC Current Gain V 50 h = -1V, I = -10mA FE CE C V = -1V, I = -100mA 50 CE C V (sat) Collector-Emitter Saturation Voltage I = -100mA, I = -10mA -0.25 V CE C B V (on) Base-Emitter On Voltage V = -1V, I = -100mA -1.2 V BE CE C f Current Gain Bandwidth Product V = -1V, I = -100mA 50 MHz T CE C f=100MHz * Pulse Test: PW≤300μs, Duty Cycle≤2% Marking Marking Code Type KST55 KST56 2H Mark 2H 2G ©2002 Rev. A2, November 2002
