KST5550-MTF ,NPN Epitaxial Silicon TransistorKST5550KST5550High Voltage Transistor32SOT-2311. Base 2. Emitter 3. CollectorNPN Epitaxial Sili ..
KST5551 ,NPN Epitaxial Silicon TransistorKST5551KST5551Amplifier Transistor• Collector-Emitter Voltage: V =160V CEO 3• Collector Power Dissi ..
KST5551MTF ,NPN Epitaxial Silicon TransistorKST5551KST5551Amplifier Transistor Collector-Emitter Voltage: V =160V CEO3 Collector Power Dissip ..
KST5551-MTF ,NPN Epitaxial Silicon TransistorKST5551KST5551Amplifier Transistor Collector-Emitter Voltage: V =160V CEO3 Collector Power Dissip ..
KST55MTF ,PNP Epitaxial Silicon TransistorKST55/56KST55/56Driver Transistor• Collector-Emitter Voltage: V = KST55: - 60VCEO 3KST56: - 80V• Co ..
KST55-MTF ,PNP Epitaxial Silicon TransistorKST55/56KST55/56Driver Transistor• Collector-Emitter Voltage: V = KST55: - 60VCEO 3KST56: - 80V• Co ..
LA2110 ,FM Noise CancellerFeatures • Pilot signal compensation function. • By using in conjunction with PLL FM multiplex ster ..
LA2113 ,FM Noise CancellerOperating Characteristics at Ta = 25˚C, V =12V, See specified Test CircuitCCCs onditions RatingPl a ..
LA2200 ,ARI (Autofahrer Rundfunk Informationen) System for Car Radios-SK TypeOrdering number:EN 1216CMonolithic Linear ICLA2200, 2205ARI (Autofahrer Rundfunk Informationen)Syst ..
LA2205 ,ARI (Autofahrer Rundfunk Informationen) System for Car Radios-SK TypeOrdering number:EN 1216CMonolithic Linear ICLA2200, 2205ARI (Autofahrer Rundfunk Informationen)Syst ..
LA2211 ,ARI System-SK TypeOrdering number: EN 726EMonolithic Linear ICNo.726EARI Syrstem-SK Type _As ICs for Autofahrer Rundf ..
LA2220 ,ARI System For Car Radio(SK Type, Nonadjusting VCO)Operating Characteristics at Ta=25°C,VCC=8V,vin=2OOmv,L+R=851,19kHz pilot=10%,unitVccmax 110 16 vv1 ..
KST5550-MTF
NPN Epitaxial Silicon Transistor
KST5550 KST5550 High Voltage Transistor 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 160 V CBO V Collector-Emitter Voltage 140 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current 600 mA C P Collector Power Dissipation 350 mW C T Storage Temperature 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units BV Collector-Base Breakdown Voltage I =10μA, I =0 160 V CBO C E BV Collector-Emitter Breakdown Voltage I =1mA, I =0 140 V CEO C B BV Emitter-Base Breakdown Voltage I =10μA, I =0 6 V EBO E C I Collector Cut-off Current V =100V, I=0 100nA CBO CB E I Emitter Cut-off Current V =4V, I =0 50 nA EBO EB C h DC Current Gain V =5V, I =1.0mA 60 FE CE C V =5V, I =10mA 60 250 CE C V =5V, I =50mA 20 CE C V (sat) Collector-Emitter Saturation Voltage I =10mA, I =1mA 0.15 V CE C B I =50mA, I =5mA 0.25 V C B V (sat) Base-Emitter Saturation Voltage I =10mA, I =1mA 1.0 V BE C B I =50mA, I =5mA 1.2 V C B f Current Gain Bandwidth Product I =10mA, V =10V 100 300 MHz T C CE f=100MHz C Output Capacitance V =10V, I =0, f=1.0MHz 6.0 pF ob CB E Marking 1F ©2002 Rev. A2, November 2002
