KST5401 ,PNP Epitaxial Silicon TransistorKST5401KST5401High Voltage Transistor32SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial Sili ..
KST5401MTF ,PNP Epitaxial Silicon TransistorKST5401KST5401High Voltage Transistor32SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial Sili ..
KST5401MTF ,PNP Epitaxial Silicon TransistorKST5401KST5401High Voltage Transistor32SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial Sili ..
KST5401-MTF ,PNP Epitaxial Silicon TransistorKST5401KST5401High Voltage Transistor32SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial Sili ..
KST55 ,PNP Epitaxial Silicon TransistorKST55/56KST55/56Driver Transistor• Collector-Emitter Voltage: V = KST55: - 60VCEO 3KST56: - 80V• Co ..
KST55 ,PNP Epitaxial Silicon TransistorKST55/56KST55/56Driver Transistor• Collector-Emitter Voltage: V = KST55: - 60VCEO 3KST56: - 80V• Co ..
LA-201 , L Series - Power Entry Modules
LA2010 ,Audio Level SensorOrdering number:ENN1343DMonolithic Linear ICLA2010Audio Level SensorOverview Package DimensionsThe ..
LA2110 ,FM Noise CancellerFeatures • Pilot signal compensation function. • By using in conjunction with PLL FM multiplex ster ..
LA2113 ,FM Noise CancellerOperating Characteristics at Ta = 25˚C, V =12V, See specified Test CircuitCCCs onditions RatingPl a ..
LA2200 ,ARI (Autofahrer Rundfunk Informationen) System for Car Radios-SK TypeOrdering number:EN 1216CMonolithic Linear ICLA2200, 2205ARI (Autofahrer Rundfunk Informationen)Syst ..
LA2205 ,ARI (Autofahrer Rundfunk Informationen) System for Car Radios-SK TypeOrdering number:EN 1216CMonolithic Linear ICLA2200, 2205ARI (Autofahrer Rundfunk Informationen)Syst ..
KST5401
PNP Epitaxial Silicon Transistor
KST5401 KST5401 High Voltage Transistor 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage -160 V CBO V Collector-Emitter Voltage -150 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current -500 mA C P Collector Power Dissipation 350 mW C T Storage Temperature 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units BV Collector-Base Breakdown Voltage I = -100μA, I =0 -160 V CBO C E BV Collector-Emitter Breakdown Voltage I = -1.0mA, I =0 -150 V CEO C B BV Emitter-Base Breakdown Voltage I = -10μA, I =0 -5 V EBO E C I Collector Cut-off Current V = -100V, I=0 -50nA CBO CB E h DC Current Gain V = -5V, I = -1.0mA 50 FE CE C V = -5V, I = -10mA 60 240 CE C V = -5V, I = -50mA 50 CE C V (sat) Collector-Emitter Saturation Voltage I = -10mA, I = -1.0mA -0.2 V CE C B I = -50mA, I = -5mA -0.5 V C B V (sat) Base-Emitter Saturation Voltage I = -10mA, I = -1.0mA -1.0 V BE C B I = -50mA, I = -5mA -1.0 V C B f Current Gain Bandwidth Product I = -10mA, V = -10V 100 300 MHz T C CE f=100MHz C Output Capacitance V = -10V, I =0, f=1.0MHz 6.0 pF ob CB E NF Noise Figure V = -5V, I = -200μA 8.0 dB CE C R =10KΩ, f=10Hz to 15.7KHz S Marking 2L ©2001 Rev. A1, July 2001
