KST5089-MTF ,NPN Epitaxial Silicon TransistorKST5088/5089KST5088/50893Low Noise Transistor2SOT-2311. Base 2. Emitter 3. CollectorNPN Epitaxi ..
KST5179 ,NPN Epitaxial Silicon TransistorKST5179KST5179RF Amplifier Transistor32SOT-2311. Base 2. Emitter 3. CollectorNPN Epitaxial Sili ..
KST5179MTF ,NPN Epitaxial Silicon TransistorKST5179KST5179RF Amplifier Transistor32SOT-2311. Base 2. Emitter 3. CollectorNPN Epitaxial Sili ..
KST5401 ,PNP Epitaxial Silicon TransistorKST5401KST5401High Voltage Transistor32SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial Sili ..
KST5401MTF ,PNP Epitaxial Silicon TransistorKST5401KST5401High Voltage Transistor32SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial Sili ..
KST5401MTF ,PNP Epitaxial Silicon TransistorKST5401KST5401High Voltage Transistor32SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial Sili ..
LA2000M ,Audio Level SensorFeatures.Has transistors capable of driving plungers with maximumMaximum Ratings at Ta = 25°C50 mA, ..
LA-201 , L Series - Power Entry Modules
LA2010 ,Audio Level SensorOrdering number:ENN1343DMonolithic Linear ICLA2010Audio Level SensorOverview Package DimensionsThe ..
LA2110 ,FM Noise CancellerFeatures • Pilot signal compensation function. • By using in conjunction with PLL FM multiplex ster ..
LA2113 ,FM Noise CancellerOperating Characteristics at Ta = 25˚C, V =12V, See specified Test CircuitCCCs onditions RatingPl a ..
LA2200 ,ARI (Autofahrer Rundfunk Informationen) System for Car Radios-SK TypeOrdering number:EN 1216CMonolithic Linear ICLA2200, 2205ARI (Autofahrer Rundfunk Informationen)Syst ..
KST5089-MTF
NPN Epitaxial Silicon Transistor
KST5088/5089 KST5088/5089 3 Low Noise Transistor 2 SOT-23 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage CBO : KST5088 35 V : KST5089 30 V V Collector-Emitter Voltage CEO : KST5088 30 V : KST5089 25 V V Emitter-Base Voltage 4.5 V EBO I Collector Current 50 mA C P Collector Power Dissipation 350 mW C T Storage Temperature 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units BV Collector-Base Breakdown Voltage I =100μA, I =0 CBO C E : KST5088 35 V : KST5089 30 V BV Collector-Emitter Breakdown Voltage I =1mA, I =0 CEO C B : KST5088 30 V : KST5089 25 V I Collector Cut-off Current CBO : KST5088 V =20V, I =0 50 nA CB E : KST5089 V =15V, I =0 50 nA CB E I Emitter Cut-off Current V =3V, I =0 50 nA EBO EB C h DC Current Gain FE : KST5088 V =5V, I =100μA 300 900 CE C : KST5089 400 1,200 : KST5088 V =5V, I =1mA 350 CE C : KST5089 450 : KST5088 V =5V, I =10mA 300 CE C : KST5089 400 V (sat) Collector-Emitter Saturation Voltage I =10mA, I =1mA 0.5 V CE C B V (sat) Base-Emitter Saturation Voltage I =10mA, I =1mA 0.8 V BE C B f Current Gain-Bandwidth Product V =5V, I =500μA, f=20MHz 50 MHz T CE C C Output Capacitance V =5V, I =0, f=100KHz 4 pF ob CB E NF Noise Figure : KST5088 I =100μA, V =5V 3 dB C CE : KST5089 R =10KΩ, f=10Hz to 15.7KHz 2 dB S ©2002 Rev. A2, November 2002
