KST5087MTF ,PNP Epitaxial Silicon TransistorKST5086/5087KST5086/5087Low Noise Transistor32SOT-231PNP Epitaxial Silicon Transistor1. Base 2. E ..
KST5088 ,NPN Epitaxial Silicon TransistorKST5088/5089KST5088/50893Low Noise Transistor2SOT-2311. Base 2. Emitter 3. CollectorNPN Epitaxi ..
KST5089 ,NPN Epitaxial Silicon TransistorKST5088/5089KST5088/50893Low Noise Transistor2SOT-2311. Base 2. Emitter 3. CollectorNPN Epitaxi ..
KST5089-MTF ,NPN Epitaxial Silicon TransistorKST5088/5089KST5088/50893Low Noise Transistor2SOT-2311. Base 2. Emitter 3. CollectorNPN Epitaxi ..
KST5179 ,NPN Epitaxial Silicon TransistorKST5179KST5179RF Amplifier Transistor32SOT-2311. Base 2. Emitter 3. CollectorNPN Epitaxial Sili ..
KST5179MTF ,NPN Epitaxial Silicon TransistorKST5179KST5179RF Amplifier Transistor32SOT-2311. Base 2. Emitter 3. CollectorNPN Epitaxial Sili ..
LA2000 ,Audio Level SensorOrdering number: EN982CMonolithic Linear ICLA2000Audio Level SensorOverview Package Dimensionsunit ..
LA2000M ,Audio Level SensorFeatures.Has transistors capable of driving plungers with maximumMaximum Ratings at Ta = 25°C50 mA, ..
LA-201 , L Series - Power Entry Modules
LA2010 ,Audio Level SensorOrdering number:ENN1343DMonolithic Linear ICLA2010Audio Level SensorOverview Package DimensionsThe ..
LA2110 ,FM Noise CancellerFeatures • Pilot signal compensation function. • By using in conjunction with PLL FM multiplex ster ..
LA2113 ,FM Noise CancellerOperating Characteristics at Ta = 25˚C, V =12V, See specified Test CircuitCCCs onditions RatingPl a ..
KST5086MTF-KST5087MTF
PNP Epitaxial Silicon Transistor
KST5086/5087 KST5086/5087 Low Noise Transistor 3 2 SOT-23 1 PNP Epitaxial Silicon Transistor 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage -50 V CBO V Collector-Emitter Voltage -50 V CEO V Emitter-Base Voltage -3 V EBO I Collector Current -50 mA C P Collector Power Dissipation 350 mW C T Storage Temperature 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units BV Collector-Base Breakdown Voltage I = -100μA, I =0 -50 V CBO C E BV Collector-Emitter Breakdown Voltage I = -1mA, I =0 -50 V CEO C B I Collector Cut-off Current V = -20V, I =0 -50 nA CBO CB E h DC Current Gain FE : KST5086 V = -5V, I = -100μA 150 500 CE C : KST5087 250 800 : KST5086 V = -5V, I = -1mA 150 CE C : KST5087 250 : KST5086 V = -5V, I = -10mA 150 CE C : KST5087 250 V (sat) Collector-Emitter Saturation Voltage I = -10mA, I = -1mA -0.3 V CE C B V (sat) Base-Emitter Saturation Voltage I = -10mA, I = -1mA -0.85 V BE C B f Current Gain Bandwidth Product V = -5V, I = -500μA 40 MHz T CE C f=20MHz C Output Capacitance V = -5V, I =0 4pF ob CB E f=100MHz NF Noise Figure : KST5086 I = -100μA, V = -5V 3 dB C CE R =3KΩ, f=1KHz 2 dB : KST5087 S : KST5087 V = -5V, I = -20mA 2 dB CE C R =10KΩ, f=10Hz to 15.7KHz S Marking Code Type KST5086 KST5087 Mark 2P 2Q Marking 2P ©2002 Rev. A2, November 2002
