KST42-MTF ,NPN Epitaxial Silicon TransistorKST42/43KST42/43High Voltage Transistor32SOT-2311. Base 2. Emitter 3. CollectorNPN Epitaxial Si ..
KST42-MTF ,NPN Epitaxial Silicon TransistorKST42/43KST42/43High Voltage Transistor32SOT-2311. Base 2. Emitter 3. CollectorNPN Epitaxial Si ..
KST43MTF ,NPN Epitaxial Silicon TransistorKST42/43KST42/43High Voltage Transistor32SOT-2311. Base 2. Emitter 3. CollectorNPN Epitaxial Si ..
KST43-MTF ,NPN Epitaxial Silicon TransistorKST42/43KST42/43High Voltage Transistor32SOT-2311. Base 2. Emitter 3. CollectorNPN Epitaxial Si ..
KST4401 ,NPN Epitaxial Silicon TransistorKST4401KST4401Switching Transistor32SOT-2311. Base 2. Emitter 3. CollectorNPN Epitaxial Silicon ..
KST4401 ,NPN Epitaxial Silicon TransistorKST4401KST4401Switching Transistor32SOT-2311. Base 2. Emitter 3. CollectorNPN Epitaxial Silicon ..
LA1862M ,Single-chip Tuner System for Car StereoFeatures.Pin compatible with the LA1861M.Improved I/O S-meter characteristics.Excellent sound quali ..
LA1867NM ,Car Radio Single-Chip Tuner SystemOperating Characteristics at Ta = 25°C, V = 8.5 V (Note that these measurements are made usingCCthe ..
LA1875 ,Single-Chip, Electronic Tuner for Car StereoFEATURES. AM, FM IF and MPX circuitsAntenna-damping AM AGC circuit with rapid chargeand discharge c ..
LA1875M ,Single-chip, Electronic Tuner for Car StereoElectrical CharacteristicsFM characteristics at Ta = 25˚C, V =8.5V, f =10.7MHz, f =1kHz, 75kHz devi ..
LA1888 ,Car Stereo Single-Chip Tuner ICOrdering numbal : EN4823AMonolilhlc Linear ICLA1888NMSAMYOCar Stereo Single-Chip Tuner ICOverviewTh ..
LA1888NM ,Car Stereo Single-Chip Tuner ICOrdering numbal : EN4823AMonolilhlc Linear ICLA1888NMSAMYOCar Stereo Single-Chip Tuner ICOverviewTh ..
KST42MTF-KST42-MTF-KST43MTF-KST43-MTF
NPN Epitaxial Silicon Transistor
KST42/43 KST42/43 High Voltage Transistor 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector Base Voltage CBO : KST42 300 V : KST43 200 V V Collector-Emitter Voltage CEO : KST42 300 V : KST43 200 V V Emitter-Base Voltage 6 V EBO I Collector Current 500 mA C P Collector Power Dissipation 350 mW C T Storage Temperature 150 °C STG R (j-a) Thermal Resistance junction to Ambient 357 °C/W TH Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units BV Collector-Emitter Breakdown Voltage I =100μA, I =0 CBO C E : KST42 300 V : KST43 200 V BV * Collector -Emitter Breakdown Voltage I =1mA, I =0 CEO C B : KST42 300 V : KST43 200 V BV Emitter-Base Breakdown Voltage I =100μA, I =0 6 V EBO E C I Collector Cut-off Current V =200V, I=0 0.1 μA CBO CB E I Emitter Cut-off Current V =5V, I =0 0.1 μA EBO CB C h * DC Current Gain V =10V, I =1mA 25 FE CE C V =10V, I =10mA 40 CE C V =10V, I =30mA 40 CE C V (sat) * Collector-Emitter Saturation Voltage I =20mA, I =2mA 0.5 V CE C B V (sat) * Base-Emitter Saturation Voltage I =20mA, I =2mA 0.9 V BE C B C Output Capacitance ob : KST42 V =20V, I =0 3 pF CB E : KST43 f=1MHz 4 pF f Current Gain Bandwidth Product V =20V, I =10mA 50 MHz T CE C f=100MHz * Pulse Test: PW≤300μs, Duty Cycle≤2% ©2002 Rev. A2, November 2002
