KST4125 ,PNP Epitaxial Silicon TransistorKST4125KST4125General Purpose Transistor32SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial S ..
KST4125 ,PNP Epitaxial Silicon TransistorKST4125KST4125General Purpose Transistor32SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial S ..
KST4125-MTF ,PNP Epitaxial Silicon TransistorKST4125KST4125General Purpose Transistor32SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial S ..
KST4126 ,PNP Epitaxial Silicon TransistorKST4126KST4126General Purpose Transistor32SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial S ..
KST42 ,NPN Epitaxial Silicon TransistorKST42/43KST42/43High Voltage Transistor32SOT-2311. Base 2. Emitter 3. CollectorNPN Epitaxial Si ..
KST42MTF ,NPN Epitaxial Silicon TransistorKST42/43KST42/43High Voltage Transistor32SOT-2311. Base 2. Emitter 3. CollectorNPN Epitaxial Si ..
LA1851N ,DTS Single-chip Tuner ICOrdering number: EN3231CMonolithic Linear IC_ LA1851 NNo. 32310DTS Single-chip Tuner ICOverview Pac ..
LA1862 ,Single-Chip Tuner System for Car StereoFEATURES MHCCNT STOUTHCCNT PLLIN. Pin compatible with the LA1861M. Improved I/O S-meter characteris ..
LA1862M ,Single-chip Tuner System for Car StereoFeatures.Pin compatible with the LA1861M.Improved I/O S-meter characteristics.Excellent sound quali ..
LA1867NM ,Car Radio Single-Chip Tuner SystemOperating Characteristics at Ta = 25°C, V = 8.5 V (Note that these measurements are made usingCCthe ..
LA1875 ,Single-Chip, Electronic Tuner for Car StereoFEATURES. AM, FM IF and MPX circuitsAntenna-damping AM AGC circuit with rapid chargeand discharge c ..
LA1875M ,Single-chip, Electronic Tuner for Car StereoElectrical CharacteristicsFM characteristics at Ta = 25˚C, V =8.5V, f =10.7MHz, f =1kHz, 75kHz devi ..
KST4125
PNP Epitaxial Silicon Transistor
KST4125 KST4125 General Purpose Transistor 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage -30 V CBO V Collector-Emitter Voltage -30 V CEO V Emitter-Base Voltage -4 V EBO I Collector Current -200 mA C P Collector Power Dissipation 350 mW C T Storage Temperature 150 °C STG • Refer to KST3906 for graphs Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units BV Collector-Base Breakdown Voltage I = -10μA, I =0 -30 V CBO C E BV * Collector-Emitter Breakdown Voltage I = -1mA, I =0 -30 V CEO C E BV Emitter-Base Breakdown Voltage I = -10μA, I =0 -4 V EBO E C I Collector Cut-off Current V = -20V, I =0 -50 nA CBO CB E I Emitter Cut-off Current V = -3V, I =0 -50 nA EBO EB C h * DC Current Gain V = -1V, I = -2.0mA 50 150 FE CE C V = -1V, I = -50mA 25 CE C V (sat) * Collector-Emitter Saturation Voltage I = -50mA, I = -5.0mA -0.4 V CE C B V (sat) * Base-Emitter Saturation Voltage I = -50mA, I = -5.0mA -0.95 V BE C B f Current Gain Bandwidth Product I = -10mA, V = -20V 200 MHz T C CE f=100MHz C Output Capacitance V = -5V, I =0, f=100KHz 4.5 pF ob CB E NF Noise Figure I = -100μA, V = -5V 5dB C CE R =1KΩ S f=10Hz to 15.7KHz * Pulse Test: PW≤300μs, Duty Cycle≤2% Marking ZD ©2001 Rev. A1, July 2001
