KST4124 ,NPN Epitaxial Silicon TransistorKST4124KST4124General Purpose Transistor32SOT-2311. Base 2. Emitter 3. CollectorNPN Epitaxial S ..
KST4125 ,PNP Epitaxial Silicon TransistorKST4125KST4125General Purpose Transistor32SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial S ..
KST4125 ,PNP Epitaxial Silicon TransistorKST4125KST4125General Purpose Transistor32SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial S ..
KST4125-MTF ,PNP Epitaxial Silicon TransistorKST4125KST4125General Purpose Transistor32SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial S ..
KST4126 ,PNP Epitaxial Silicon TransistorKST4126KST4126General Purpose Transistor32SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial S ..
KST42 ,NPN Epitaxial Silicon TransistorKST42/43KST42/43High Voltage Transistor32SOT-2311. Base 2. Emitter 3. CollectorNPN Epitaxial Si ..
LA1851N ,DTS Single-chip Tuner ICOrdering number: EN3231CMonolithic Linear IC_ LA1851 NNo. 32310DTS Single-chip Tuner ICOverview Pac ..
LA1862 ,Single-Chip Tuner System for Car StereoFEATURES MHCCNT STOUTHCCNT PLLIN. Pin compatible with the LA1861M. Improved I/O S-meter characteris ..
LA1862M ,Single-chip Tuner System for Car StereoFeatures.Pin compatible with the LA1861M.Improved I/O S-meter characteristics.Excellent sound quali ..
LA1867NM ,Car Radio Single-Chip Tuner SystemOperating Characteristics at Ta = 25°C, V = 8.5 V (Note that these measurements are made usingCCthe ..
LA1875 ,Single-Chip, Electronic Tuner for Car StereoFEATURES. AM, FM IF and MPX circuitsAntenna-damping AM AGC circuit with rapid chargeand discharge c ..
LA1875M ,Single-chip, Electronic Tuner for Car StereoElectrical CharacteristicsFM characteristics at Ta = 25˚C, V =8.5V, f =10.7MHz, f =1kHz, 75kHz devi ..
KST4124
NPN Epitaxial Silicon Transistor
KST4124 KST4124 General Purpose Transistor 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 30 V CBO V Collector-Emitter Voltage 25 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 200 mA C P Collector Power Dissipation 350 mW C T Storage Temperature 150 °C STG • Refer to KST3904 for graphs Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units BV Collector-Base Breakdown Voltage I =10μA, I =0 30 V CBO C E BV * Collector-Emitter Breakdown Voltage I =1.0mA, I =0 25 V CEO C B BV Emitter-Base Breakdown Voltage I =10μA, I =0 5 V EBO E C I Collector Cut-off Current V =20V, I =0 50 nA CBO CB E I Emitter Cut-off Current V =3V, I =0 50 nA EBO EB C h * DC Current Gain V =1V, I =2mA 120 360 FE CE C V =1V, I =50mA 60 CE C V (sat) * Collector-Emitter Saturation Voltage I =50mA, I =5.0mA 0.3 V CE C B V (sat) * Base-Emitter Saturation Voltage I =50mA, I =5.0mA 0.95 V BE C B f Current Gain Bandwidth Product I =10mA, V =20V 300 MHz T C CE f=100MHz C Output Capacitance V =5V, I =0, f=1.0MHz 4 pF ob CB E NF Noise Figure I =100μA, V =5V 5dB C CE R =1KΩ S f=10Hz to 15.7KHz * Pulse Test: PW≤300μs, Duty Cycle≤2% Marking ZC ©2001 Rev. A1, July 2001
