KST2907AMTF ,PNP Epitaxial Silicon TransistorKST2907AKST2907A3General Purpose Transistor2SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial ..
KST2907AMTF ,PNP Epitaxial Silicon TransistorKST2907AKST2907A3General Purpose Transistor2SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial ..
KST2907A-MTF ,PNP Epitaxial Silicon TransistorKST2907AKST2907A3General Purpose Transistor2SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial ..
KST2907A-MTF ,PNP Epitaxial Silicon TransistorKST2907AKST2907A3General Purpose Transistor2SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial ..
KST3904 ,NPN Epitaxial Silicon TransistorKST3904KST39043General Purpose Transistor2SOT-2311. Base 2. Emitter 3. Collector NPN Epitaxial S ..
KST3904 ,NPN Epitaxial Silicon TransistorKST3904KST39043General Purpose Transistor2SOT-2311. Base 2. Emitter 3. Collector NPN Epitaxial S ..
LA1837M ,LA1837M
LA1838 ,Single-Chip Home Stereo IC with Electronic Tuning SupportOperating Characteristics at Ta = 25°C, V = 9 V, in the specified test circuit.CCRatingsParameter S ..
LA1844M , For Home Stereo Single-chip Tuner IC
LA1845N ,Single-Chip Home Stereo ICOrdering number : ENN7185Monolithic linear ICLA1845N, 1845NMSingle-Chip Home Stereo ICOverview Pack ..
LA1845N ,Single-Chip Home Stereo ICFeatures• Integrated MPX VCO (ceramic resonators are no longer24 13required.)• Built-in adjacent ch ..
LA1845N ,Single-Chip Home Stereo ICOperating Characteristics at Ta = 25°C, V = 8 V, in the specified test circuit.CCRatingsParameter S ..
KST2907AMTF-KST2907A-MTF
PNP Epitaxial Silicon Transistor
KST2907A KST2907A 3 General Purpose Transistor 2 SOT-23 1 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage -60 V CBO V Collector-Emitter Voltage -60 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current -600 mA C P Collector Power Dissipation 350 mW C T Storage Temperature 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units BV Collector-Base Breakdown Voltage I = -10μA, I =0 -60 V CBO C E BV * Collector-Emitter Breakdown Voltage I = -10mA, I =0 -60 V CEO C B BV Emitter-Base Breakdown Voltage I = -10μA, I =0 -5 V EBO E C I Collector Cut-off Current V = -50V, I =0 -0.01 μA CBO CB E h DC Current Gain V = -10V, I = -0.1mA 75 FE CE C V = -10V, I = -1.0mA 100 CE C V = -10V, I = -10mA 100 CE C *V = -10V, IC= -150mA 100 300 CE *V = -10V, I = -500mA 50 CE C V (sat) * Collector-Emitter Saturation Voltage I = -150mA, I = -15mA -0.4 V CE C B I = -500mA, I = -50mA -1.6 V C B V (sat) * Base-Emitter Saturation Voltage I = -150mA, I = -15mA -1.3 V BE C B I = -500mA, I = -50mA -2.6 V C B f Current Gain Bandwidth Product I = -50mA, V = -20V 200 MHz T C CE f=100MHz C Output Capacitance V = -10V, I =0, f=1.0MHz 8 pF ob CB E t Turn On Time V = -30V, I = -150mA 50 ns ON CC C I = -15mA B1 t Turn Off Time V = -6V, I = -150mA 110 ns OFF CC C I =I = -15mA B1 B2 * Pulse Test: PW≤300μs, Duty Cycle≤2% Marking 2F ©2002 Rev. A2, November 2002
