KST2484MTF ,NPN Epitaxial Silicon TransistorKST2484KST2484Low Noise Transistor32SOT-2311. Base 2. Emitter 3. CollectorNPN Epitaxial Silicon ..
KST2484-MTF ,NPN Epitaxial Silicon TransistorKST2484KST2484Low Noise Transistor32SOT-2311. Base 2. Emitter 3. CollectorNPN Epitaxial Silicon ..
KST24MTF ,NPN Epitaxial Silicon TransistorKST24KST24VHF Mixer Transistor32SOT-2311. Base 2. Emitter 3. CollectorNPN Epitaxial Silicon Tra ..
KST2907A ,PNP Epitaxial Silicon TransistorKST2907AKST2907A3General Purpose Transistor2SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial ..
KST2907A ,PNP Epitaxial Silicon TransistorKST2907AKST2907A3General Purpose Transistor2SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial ..
KST2907A ,PNP Epitaxial Silicon TransistorKST2907AKST2907A3General Purpose Transistor2SOT-2311. Base 2. Emitter 3. CollectorPNP Epitaxial ..
LA1837 ,Single-Chip Home Stereo IC with Electronic Tuning SupportOrdering number : EN5688Monolithic Linear ICLA1837Single-Chip Home Stereo IC with Electronic Tuning ..
LA1837M ,LA1837M
LA1838 ,Single-Chip Home Stereo IC with Electronic Tuning SupportOperating Characteristics at Ta = 25°C, V = 9 V, in the specified test circuit.CCRatingsParameter S ..
LA1844M , For Home Stereo Single-chip Tuner IC
LA1845N ,Single-Chip Home Stereo ICOrdering number : ENN7185Monolithic linear ICLA1845N, 1845NMSingle-Chip Home Stereo ICOverview Pack ..
LA1845N ,Single-Chip Home Stereo ICFeatures• Integrated MPX VCO (ceramic resonators are no longer24 13required.)• Built-in adjacent ch ..
KST2484MTF-KST2484-MTF
NPN Epitaxial Silicon Transistor
KST2484 KST2484 Low Noise Transistor 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector Base Voltage 60 V CBO V Collector-Emitter Voltage 60 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current 50 mA C P Collector Power Dissipation 350 mW C T Storage Temperature 150 °C STG • Refer to KSP5088 for graphs Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units BV Collector-Base Breakdown Voltage I =10μA, I =0 60 V CBO C E BV Collector-Emitter Breakdown Voltage I =10mA, I=0 60 V CEO C B BV Emitter-Base Breakdown Voltage I =10μA, I =0 5 V EBO E C I Collector Cut-off Current V =45V, I =0 10 nA CBO CB E I Emitter Cut-off Current V =5V, I =0 10 nA EBO EB C h DC Current Gain V =5V, I =1mA 250 FE CE C V =5V, I =10mA 800 CE C V (sat) Collector-Emitter Saturation Voltage I =1mA, I =0.1mA 0.35 V CE C B V (on) Base-Emitter On Voltage I =1mA, V =5V 0.95 V BE C CE C Output Capacitance V =5.0V, I =0, f=1MHz, 6 pF ob CB E NF Noise Figure I =10μA, V =5V 3dB C CE R =10KΩ, f=1KHz S Marking 1U ©2002 Rev. A2, November 2002
