KST14MTF ,NPN Epitaxial Silicon TransistorKST13/14KST13/14Darlington Amplifier Transistor32SOT-2311. Base 2. Emitter 3. CollectorNPN Epit ..
KST221G , Long Travel Tact Switch for SMT
KST2222A ,NPN Epitaxial Silicon TransistorKST2222AKST2222AGeneral Purpose Transistor2SOT-2311. Base 2. Emitter 3. CollectorNPN Epitaxial ..
KST2222A ,NPN Epitaxial Silicon TransistorKST2222AKST2222AGeneral Purpose Transistor2SOT-2311. Base 2. Emitter 3. CollectorNPN Epitaxial ..
KST2222A ,NPN Epitaxial Silicon TransistorKST2222AKST2222AGeneral Purpose Transistor2SOT-2311. Base 2. Emitter 3. CollectorNPN Epitaxial ..
KST2222AMTF ,NPN Epitaxial Silicon TransistorKST2222AKST2222AGeneral Purpose Transistor32SOT-2311. Base 2. Emitter 3. CollectorNPN Epitaxial ..
LA1833N ,System-on-Chip Tuner IC for Home Stereo Systemsfeatures— Pin arrangement nearly identical to that of the1120.9LA1832— AM coil specifications can b ..
LA1835 ,Home Stereo Single-Chip Tuner IC with Electronic Tuning SupportOrdering number : EN4159BMonolithic Linear ICLA1835Home Stereo Single-Chip Tuner IC with Electronic ..
LA1836 ,Single-Chip Home Stereo Electronic Tuning ICOrdering number : EN4787AMonolithic Linear ICLA1836, 1836MSingle-Chip Home Stereo Electronic Tuning ..
LA1836M ,Single-Chip Home Stereo Electronic Tuning ICElectrical Characteristics at Ta = 25°C, V = 7.0 V unless otherwise specifiedCC(MFP package using t ..
LA1837 ,Single-Chip Home Stereo IC with Electronic Tuning SupportOrdering number : EN5688Monolithic Linear ICLA1837Single-Chip Home Stereo IC with Electronic Tuning ..
LA1837M ,LA1837M
KST13MTF-KST13-MTF-KST14MTF
NPN Epitaxial Silicon Transistor
KST13/14 KST13/14 Darlington Amplifier Transistor 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 30 V CBO V Collector-Emitter Voltage 30 V CES V Emitter-Base Voltage 10 V EBO I Collector Current 300 mA C P Collector Power Dissipation 350 mW C T Storage Temperature 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units BV Collector-Emitter Breakdown Voltage I =100μA, V =0 30 V CES C BE I Collector Cut-off Current V =30V, I =0 100 nA CBO CB E I Emitter Cut-off Current V =10V, I =0 100 nA EBO EB C h DC Current Gain FE : KST13 V =5V, I =10mA 5K CE C : KST14 10K : KST13 V =5V, I =100mA 10K CE C : KST14 20K V (sat) Collector-Emitter Saturation Voltage I =100mA, I =0.1mA 1.5 V CE C B V (on) Base-Emitter On Voltage V =5V, I =100mA 2.0 V BE CE C f Current Gain Bandwidth Product V =5V, I =10mA 125 MHz T CE C f=100MHz Marking Code Type KST13 KST14 Mark 1M 1N Marking 1M ©2002 Rev. A2, November 2002
