KST10MTF ,NPN Epitaxial Silicon TransistorKST10KST10VHF/UHF Transistor32SOT-2311. Base 2. Emitter 3. CollectorNPN Epitaxial Silicon Trans ..
KST10MTF ,NPN Epitaxial Silicon TransistorKST10KST10VHF/UHF Transistor32SOT-2311. Base 2. Emitter 3. CollectorNPN Epitaxial Silicon Trans ..
KST13 ,NPN Epitaxial Silicon TransistorKST13/14KST13/14Darlington Amplifier Transistor32SOT-2311. Base 2. Emitter 3. CollectorNPN Epit ..
KST13 ,NPN Epitaxial Silicon TransistorKST13/14KST13/14Darlington Amplifier Transistor32SOT-2311. Base 2. Emitter 3. CollectorNPN Epit ..
KST13MTF ,NPN Epitaxial Silicon TransistorKST13/14KST13/14Darlington Amplifier Transistor32SOT-2311. Base 2. Emitter 3. CollectorNPN Epit ..
KST13MTF ,NPN Epitaxial Silicon TransistorKST13/14KST13/14Darlington Amplifier Transistor32SOT-2311. Base 2. Emitter 3. CollectorNPN Epit ..
LA1832M ,Support for AM Stereo and Electronic Tuning Radio Cassette Recorder/Music Center-Use Single-Chip IC (AM/FM IF+MPX)Features. Major reduction in required adjustments- FM detector: No adjustments(ceramic discriminato ..
LA1833N ,System-on-Chip Tuner IC for Home Stereo Systemsfeatures— Pin arrangement nearly identical to that of the1120.9LA1832— AM coil specifications can b ..
LA1835 ,Home Stereo Single-Chip Tuner IC with Electronic Tuning SupportOrdering number : EN4159BMonolithic Linear ICLA1835Home Stereo Single-Chip Tuner IC with Electronic ..
LA1836 ,Single-Chip Home Stereo Electronic Tuning ICOrdering number : EN4787AMonolithic Linear ICLA1836, 1836MSingle-Chip Home Stereo Electronic Tuning ..
LA1836M ,Single-Chip Home Stereo Electronic Tuning ICElectrical Characteristics at Ta = 25°C, V = 7.0 V unless otherwise specifiedCC(MFP package using t ..
LA1837 ,Single-Chip Home Stereo IC with Electronic Tuning SupportOrdering number : EN5688Monolithic Linear ICLA1837Single-Chip Home Stereo IC with Electronic Tuning ..
KST10MTF
NPN Epitaxial Silicon Transistor
KST10 KST10 VHF/UHF Transistor 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector Base Voltage 30 V CBO V Collector-Emitter Voltage 25 V CEO V Emitter-Base Voltage 3 V EBO P Collector Power Dissipation 350 mW C T Storage Temperature 150 °C STG R (j-a) Thermal Resistance junction to Ambient 357 °C/W TH • Refer to KSP10 for graphs Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units BV Collector-Base Breakdown Voltage I =100μA, I =0 30 V CBO C E BV Collector-Emitter Breakdown Voltage I =1mA, I =0 25 V CEO C B BV Emitter-Base Breakdown Voltage I =10μA, I =0 3 V EBO E C I Collector Cut-off Current V =25V, I =0 100 nA CBO CB E I Emitter Cut-off Current V =2V, I =0 100 nA EBO BE C h DC Current Gain V =10V, I =4mA 60 FE CE C V (sat) Collector-Emitter Saturation Voltage I =4mA, I =0.4mA 0.5 V CE C B V Base-Emitter On Voltage V =10V, I =4mA 0.95 V BE CE C f Current Gain Bandwidth Product V =10V, I =4mA, f=100MHz 650 MHz T CE C C Output Capacitance V =10V, I =0, f=1MHz 0.7 pF ob CB E C Common-Base Feedback Capacitance V =10V, I =0, f=1MHz 0.65 pF rb CB E C Collector Base Time Constant V =10V, I =4mA, f=31.8MHz 9 pF c·rbb´ CB C Marking 3E ©2002 Rev. A2, November 2002
