KSR1113 ,NPN Epitaxial Silicon TransistorKSR1113KSR1113Switching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interfac ..
KSR1201 ,NPN Epitaxial Silicon TransistorKSR1201KSR1201Switching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interfac ..
KSR1201 ,NPN Epitaxial Silicon TransistorKSR1201KSR1201Switching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interfac ..
KSR1202 , NPN (SWITCHING APPLICATION)
KSR1202 , NPN (SWITCHING APPLICATION)
KSR1203 ,NPN Epitaxial Silicon TransistorKSR1203KSR1203Switching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interfac ..
LA1600 ,1-Band AM RadioOperating Characteristics at Ta=25°C, V =3V, See specified Test Circuit.CCRatingsParameter Symbol C ..
LA17000M ,Tuner System IC with Built-in PLL for Car Audio Applicationsfeatures• AM double conversion (Up conversion method)• Enhanced FM-IF circuit(When there is interfe ..
LA1780 ,Single-Chip Tuner IC for Car RadiosFeatures• Improved noise reduction methodsPackage Dimensions— The FM front end provides excellent 3 ..
LA1780 ,Single-Chip Tuner IC for Car Radiosthermal characteristicsblocks; improvements designed to provide improved noise— Excellent FM signal ..
LA1780M ,Single-Chip Tuner IC for Car RadiosFeatures• Improved noise reduction methodsPackage Dimensions— The FM front end provides excellent 3 ..
LA1781M ,Single-Chip Tuner IC for Car Radiosthermal characteristics3Mounted on a 40 · 80 · 1.3 mm17glass epoxy printed circuit board64Independe ..
KSR1113
NPN Epitaxial Silicon Transistor
KSR1113 KSR1113 Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit 3 • Built in bias Resistor (R =2.2KΩ, R =47KΩ) 1 2 • Complement to KSR2113 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R1 R13 B R2 NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 50 V CBO V Collector-Emitter Voltage 50 V CEO V Emitter-Base Voltage 10 V EBO I Collector Current 100 mA C P Collector Power Dissipation 300 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =10μA, I =0 50 V CBO C E BV Collector-Emitter Breakdown Voltage I =100μA, I =0 50 V CEO C B I Collector Cut-off Current V =40V, I =0 0.1 μA CBO CB E h DC Current Gain V =5V, I =5mA 68 FE CE C V (sat) Collector-Emitter Saturation Voltage I =10mA, I =0.5mA 0.3 V CE C B f Current Gain Bandwidth Product V =10V, I =5mA 250 MHz T CE C C Output Capacitance V =10V, I =0 3.7 pF ob CB E f=1.0MHz V (off) Input Off Voltage V =5V, I =100μA0.5 V I CE C V (on) Input On Voltage V =0.2V, I =5mA 1.1 V I CE C R Input Resistor 1.5 2.2 2.9 KΩ 1 R /R Resistor Ratio 0.042 0.047 0.052 1 2 ©2001 Rev. A3, July 2001
