KSR1104-MTF ,NPN Epitaxial Silicon TransistorKSR1104KSR1104Switching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interfac ..
KSR1105-MTF ,NPN Epitaxial Silicon TransistorKSR1105KSR1105Switching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interfac ..
KSR1109 ,NPN (SWITCHING APPLICATION)
KSR1110 , NPN Epitaxial Silicon Transistor
KSR1113 ,NPN Epitaxial Silicon TransistorKSR1113KSR1113Switching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interfac ..
KSR1201 ,NPN Epitaxial Silicon TransistorKSR1201KSR1201Switching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interfac ..
LA1357N ,MONOLITHIC LINEAR ICVIDEO F SYSTEMFunctionsI Video IF amplifierI RF AGCI Video detectorI AFT
LA1362 ,MONOLITHIC LINEAR ICFeaturesI Stable operation due to built-in Zener diodeI Low distortionI Small-sized packageCL,A'l 3 ..
LA1363 ,MONOLITHIC LINEAR ICFeaturesI High gain, high S/N.I Peak AGC/keyed AGC available.I Usable of surface acoustic wave filt ..
LA1365 ,MONOLITHIC LINEAR ICFeaturesI Capable of direct driving of output stage.I Superior AM rejection ratio..himonolithic: li ..
LA1385 ,Vertical Deflection Circuit of B/W TVFeaturesI Wide operating voltage range of9to 18V. owing to large deflection output current ofI Sync ..
LA1460 ,V(cc):14V; 600mW; sanyo microchip
KSR1104-KSR1104MTF-KSR1104-MTF
NPN Epitaxial Silicon Transistor
KSR1104 KSR1104 Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit 3 • Built in bias Resistor (R =47KΩ, R =47KΩ) 1 2 • Complement to KSR2104 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R1 R04 B R2 NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 50 V CBO V Collector-Emitter Voltage 50 V CEO V Emitter-Base Voltage 10 V EBO I Collector Current 100 mA C P Collector Power Dissipation 200 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =10μA, I =0 50 V CBO C E BV Collector-Emitter Breakdown Voltage I =100μA, I =0 50 V CEO C B I Collector Cut-off Current V =40V, I =0 0.1 μA CBO CB E h DC Current Gain V =5V, I =5mA 68 FE CE C V (sat) Collector-Emitter Saturation Voltage I =10mA, I =0.5mA 0.3 V CE C B f Current Gain-Bandwidth Product V =10V, I =5mA 250 MHz T CE C C Output Capacitance V =10V, I =0 3.7 pF ob CB E f=1.0MHz V (off) Input Off Voltage V =5V, I =100μA0.5 V I CE C V (on) Input On Voltage V =0.3V, I =2mA 3 V I CE C R Input Resistor 32 47 62 KΩ 1 R /R Resistor Ratio 0.9 1 1.1 1 2 ©2002 Rev. A2, October 2002
