KSR1009 ,NPN Epitaxial Silicon TransistorKSR1009KSR1009Switching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interfac ..
KSR1010 ,NPN Epitaxial Silicon TransistorKSR1010KSR1010Switching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interfac ..
KSR1010 ,NPN Epitaxial Silicon TransistorKSR1010KSR1010Switching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interfac ..
KSR1010TA ,NPN Epitaxial Silicon TransistorKSR1010KSR1010Switching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interfac ..
KSR1012 , NPN (SWITCHING APPLICATION)
KSR1101 ,NPN Epitaxial Silicon TransistorKSR1101KSR1101Switching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interfac ..
LA1245 ,AM Electronic TunerFeatures• Narrow-band signal meter : Available as an automatic search-stop signal (also available a ..
LA1247 ,AM ELECTRONIC TUNERM13041; / L A1247Monolithic Linear ICThe LA1247 is a high-performance IC developed for AM electroni ..
LA1260 ,FM/AM TUner System for Radio-Casette Recorders, Music CentersOrdering number : EN1506DMonolithic Linear ICLA1260FM/AM Tuner Systemfor Radio-Casette Recorders, M ..
LA1265 ,FM/AM Tuner of Electronic Tuning TypeOrdering number : EN1820CMonolithic Linear ICLA1265FM/AM Tuner of Electronic Tuning TypeFunctionsPa ..
LA1266 ,AM/FM Tuner System Of Electronic Tuning TypeOrdering number : EN2291BMonolithic Linear ICLA1266AM/FM Tuner System OfElectronic Tuning TypeFunct ..
LA1267 ,FM/AM Tuner of Electronic Tuning TypeOperating Characteristics at Ta=25°C, V =8.5V, See specified Test Circuit CCRatingsParameter Symbol ..
KSR1009
NPN Epitaxial Silicon Transistor
KSR1009 KSR1009 Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R=4.7KΩ) • Complement to KSR2009 TO-92 1 1. Emitter 2. Collector 3. Base Equivalent Circuit C R B NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 40 V CBO V Collector-Emitter Voltage 40 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 100 mA C P Collector Power Dissipation 300 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =100μA, I =0 40 V CBO C E BV Collector-Emitter Breakdown Voltage I =1mA, I =0 40 V CEO E B I Collector Cut-off Current V =30V, I =0 0.1 μA CBO CB E h DC Current Gain V =5V, I =1mA 100 600 FE CE C V (sat) Collector-Emitter Saturation Voltage I =10mA, I =1mA 0.3 V CE C B C Output Capacitance V =10V, I =0 3.70 pF ob CB E f=1MHz f Current Gain Bandwidth Product V =10V, I =5mA 250 MHz T CE C R Input Resistor 3.2 4.7 6.2 KΩ ©2001 Rev. A2, July 2001
