KSR1004 ,NPN (SWITCHING APPLICATION)KSR1004KSR1004Switching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interfac ..
KSR1004 ,NPN (SWITCHING APPLICATION)KSR1004KSR1004Switching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interfac ..
KSR1004TA ,NPN Epitaxial Silicon TransistorKSR1004KSR1004Switching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interfac ..
KSR1004TA ,NPN Epitaxial Silicon TransistorKSR1004KSR1004Switching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interfac ..
KSR1005 ,NPN (SWITCHING APPLICATION)
KSR1006 , NPN (SWITCHING APPLICATION)
LA1225M ,FM IF Detector ICOperating Characteristics at Ta = 25°C, V = 3.0 V, fc = 10.7 MHzCCRatingsParameter Symbol Condition ..
LA1235 ,FM IF System ApplicationsOperating Characteristics at Ta=25°C, V =12V, f=10.7MHzCCRatingsParameter Symbol Conditions Unitmin ..
LA1245 ,AM Electronic TunerFeatures• Narrow-band signal meter : Available as an automatic search-stop signal (also available a ..
LA1247 ,AM ELECTRONIC TUNERM13041; / L A1247Monolithic Linear ICThe LA1247 is a high-performance IC developed for AM electroni ..
LA1260 ,FM/AM TUner System for Radio-Casette Recorders, Music CentersOrdering number : EN1506DMonolithic Linear ICLA1260FM/AM Tuner Systemfor Radio-Casette Recorders, M ..
LA1265 ,FM/AM Tuner of Electronic Tuning TypeOrdering number : EN1820CMonolithic Linear ICLA1265FM/AM Tuner of Electronic Tuning TypeFunctionsPa ..
KSR1004-KSR1004TA
NPN Epitaxial Silicon Transistor
KSR1004 KSR1004 Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit Driver Circuit, • Built in bias Resistor (R =47KΩ, R =47KΩ) 1 2 • Complement to KSR2004 TO-92 1 1. Emitter 2. Collector 3. Base Equivalent Circuit C R1 B R2 NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 50 V CBO V Collector-Emitter Voltage 50 V CEO V Emitter-Base Voltage 10 V EBO I Collector Current 100 mA C P Collector Power Dissipation 300 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =10μA, I =0 50 V CBO C E BV Collector-Emitter Breakdown Voltage I =100μA, I =0 50 V CEO C B I Collector Cut-off Current V =40V, I =0 0.1 μA CBO CB E h DC Current Gain V =5V, I =5mA 68 FE CE C V (sat) Collector-Emitter Saturation Voltage I =10mA, I =0.5mA 0.3 V CE C B f Current Gain Bandwidth Product V =10V, I =5mA 250 MHz T CE C C Output Capacitance V =10V, I =0 3.7 pF ob CB E f=1.0MHz V (off) Input Off Voltage V =5V, I =100μA0.5 V I CE C V (on) Input On Voltage V =0.3V, I =2mA 3 V I CE C R Input Resistor 32 47 62 KΩ 1 R /R Resistor Ratio 0.9 1 1.1 1 2 ©2002 Rev. A2, October 2002
