KSR1001TA ,NPN Epitaxial Silicon TransistorKSR1001KSR1001Switching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interfac ..
KSR1002 , Switching Application (Bias Resistor Built In)
KSR1003 ,NPN (SWITCHING APPLICATIONS)
KSR1003 ,NPN (SWITCHING APPLICATIONS)
KSR1003 ,NPN (SWITCHING APPLICATIONS)
KSR1003 ,NPN (SWITCHING APPLICATIONS)
LA1193M ,High-Performance FM Front End for Car RadiosFeatures• Improved interference characteristics— Expanded mixer input dynamic rangeMixer input usab ..
LA1193V ,High-Performance FM Front End for Car RadiosFeatures• Improved interference characteristics— Expanded mixer input dynamic rangeMixer input usab ..
LA1207 , FM/AM IF AMP FOR RADIO CASSETE MUSIC CENTER
LA1225M ,FM IF Detector ICOperating Characteristics at Ta = 25°C, V = 3.0 V, fc = 10.7 MHzCCRatingsParameter Symbol Condition ..
LA1235 ,FM IF System ApplicationsOperating Characteristics at Ta=25°C, V =12V, f=10.7MHzCCRatingsParameter Symbol Conditions Unitmin ..
LA1245 ,AM Electronic TunerFeatures• Narrow-band signal meter : Available as an automatic search-stop signal (also available a ..
KSR1001TA
NPN Epitaxial Silicon Transistor
KSR1001 KSR1001 Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.7KΩ, R2=4.7KΩ) • Complement to KSR2001 TO-92 1 1. Emitter 2. Collector 3. Base Equivalent Circuit C R1 B R2 NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 50 V CBO V Collector-Emitter Voltage 50 V CEO V Emitter-Base Voltage 10 V EBO I Collector Current 100 mA C P Collector Power Dissipation 300 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =10μA, I =0 50 V CBO C E BV Collector-Emitter Breakdown Voltage I =100μA, I =0 50 V CEO C B I Collector Cut-off Current V =40V, I =0 0.1 μA CBO CB E h DC Current Gain V =5V, I =10mA 20 FE CE C V (sat) Collector-Emitter Saturation Voltage I =10mA, I =0.5mA 0.3 V CE C B f Current Gain Bandwidth Product V =10V, I =5mA 250 MHz T CE C C Output Capacitance V =10V, I =0 3.7 pF ob CB E f=1.0MHz V (off) Input Off Voltage V =5V, I =100μΑ 0.5 V I CE C V (on) Input On Voltage V =0.3V, I =20mA 3 V I CE C R Input Resistor 3.2 4.7 6.2 KΩ 1 R /R Resistor Ratio 0.9 1 1.1 1 2 ©2002 Rev. A3, October 2002
