KSR1001 ,NPN Epitaxial Silicon TransistorKSR1001KSR1001Switching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interfac ..
KSR1001 ,NPN Epitaxial Silicon TransistorKSR1001KSR1001Switching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interfac ..
KSR1001TA ,NPN Epitaxial Silicon TransistorKSR1001KSR1001Switching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interfac ..
KSR1002 , Switching Application (Bias Resistor Built In)
KSR1003 ,NPN (SWITCHING APPLICATIONS)
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LA1193M ,High-Performance FM Front End for Car RadiosFeatures• Improved interference characteristics— Expanded mixer input dynamic rangeMixer input usab ..
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LA1207 , FM/AM IF AMP FOR RADIO CASSETE MUSIC CENTER
LA1225M ,FM IF Detector ICOperating Characteristics at Ta = 25°C, V = 3.0 V, fc = 10.7 MHzCCRatingsParameter Symbol Condition ..
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LA1245 ,AM Electronic TunerFeatures• Narrow-band signal meter : Available as an automatic search-stop signal (also available a ..
KSR1001
NPN Epitaxial Silicon Transistor
KSR1001 KSR1001 Switching Application (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1=4.7KΩ, R2=4.7KΩ) • Complement to KSR2001 TO-92 1 1. Emitter 2. Collector 3. Base Equivalent Circuit C R1 B R2 NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 50 V CBO V Collector-Emitter Voltage 50 V CEO V Emitter-Base Voltage 10 V EBO I Collector Current 100 mA C P Collector Power Dissipation 300 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I =10μA, I =0 50 V CBO C E BV Collector-Emitter Breakdown Voltage I =100μA, I =0 50 V CEO C B I Collector Cut-off Current V =40V, I =0 0.1 μA CBO CB E h DC Current Gain V =5V, I =10mA 20 FE CE C V (sat) Collector-Emitter Saturation Voltage I =10mA, I =0.5mA 0.3 V CE C B f Current Gain Bandwidth Product V =10V, I =5mA 250 MHz T CE C C Output Capacitance V =10V, I =0 3.7 pF ob CB E f=1.0MHz V (off) Input Off Voltage V =5V, I =100μΑ 0.5 V I CE C V (on) Input On Voltage V =0.3V, I =20mA 3 V I CE C R Input Resistor 3.2 4.7 6.2 KΩ 1 R /R Resistor Ratio 0.9 1 1.1 1 2 ©2001 Rev. A2, July 2001
