KSP94TA ,PNP Epitaxial Silicon TransistorKSP94KSP94High Voltage Transistor• High Collector-Emitter Voltage: V = -400VCEO• Low Collector-Emit ..
KSP94-TA ,PNP Epitaxial Silicon TransistorKSP94KSP94High Voltage Transistor• High Collector-Emitter Voltage: V = -400VCEO• Low Collector-Emit ..
KSQ60A03LB , Low Forward Voltage Drop Low Power Loss, High Efficiency, High Surge Current Capability
KSR1001 ,NPN Epitaxial Silicon TransistorKSR1001KSR1001Switching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interfac ..
KSR1001 ,NPN Epitaxial Silicon TransistorKSR1001KSR1001Switching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interfac ..
KSR1001TA ,NPN Epitaxial Silicon TransistorKSR1001KSR1001Switching Application (Bias Resistor Built In)• Switching circuit, Inverter, Interfac ..
LA1185 ,FM Front-end for Radio-cassette Recorder, Home Stereo ApplicationsOrdering number: EN1521DMonolithic Linear ICLA1185FM Front-end for Radio-cassette Recorder, HomeSte ..
LA1186 ,FM Front End for Radio-Cassette Recorders, Music CentersFeatures and FunctionsPackage Dimensions• Contains RF amplifier, MIX, OSC, AFC diode.unit: mm• Oper ..
LA1186N ,FM Front End for Radio-Cassette Recorders, Music CentersOrdering number : EN1840AMonolithic Linear ICLA1186NFM Front End for Radio-Cassette Recorders,Music ..
LA1193M ,High-Performance FM Front End for Car RadiosFeatures• Improved interference characteristics— Expanded mixer input dynamic rangeMixer input usab ..
LA1193V ,High-Performance FM Front End for Car RadiosFeatures• Improved interference characteristics— Expanded mixer input dynamic rangeMixer input usab ..
LA1207 , FM/AM IF AMP FOR RADIO CASSETE MUSIC CENTER
KSP94BU-KSP94TA-KSP94-TA
PNP Epitaxial Silicon Transistor
KSP94 KSP94 High Voltage Transistor • High Collector-Emitter Voltage: V = -400V CEO • Low Collector-Emitter Saturation Voltage • Complement to KSP44 TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage -400 V CBO V Collector-Emitter Voltage -400 V CEO V Emitter-Base Voltage -6 V EBO I Collector Current -300 mA C P Collector Power Dissipation 625 mW C T Junction Temperature 150 °C J T Storage Temperature -55~150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ. Max. Units BV Collector-Base Breakdown Voltage I = -100μA, I =0 -400 V CBO C E BV Collector-Emitter Breakdown Voltage I = -100μA, V =0 -400 V CES C BE BV Emitter-Base Breakdown Voltage I = -10μA, I =0 -6 V EBO E C I Collector Cut-off Current V = -300V, V =0 -100 nA CBO CB E I Collector Cut-off Current V = -400V, V =0V -1 μA CES CE BE I Emitter Cut-off Current V = -4V, I =0 -100 nA EBO BE C 40 h DC Current Gain V = -10V, I = -1mA FE1 CE C h V = -10V, I = -10mA 50 300 FE2 CE C h V = -10V, I = -50mA 45 FE3 CE C h V = -10V, I = -100mA 40 FE4 CE C -500 mV V (sat) Collector-Emitter Saturation Voltage I = -10mA, I = -1mA CE 1 C B V (sat) I = -50mA, I = -5mA -750 mV CE 2 C B V (sat) Base-Emitter Saturation Voltage I = -10mA, I = -1mA -750 mV BE C B C Output Capacitance V = -20V, I =0, f=1MHz 7 pF ob CB E ©2002 Rev. A2, July 2002
