KSP55TA ,PNP Epitaxial Silicon TransistorKSP55/56KSP55/56Amplifier Transistor• Collector-Emitter Voltage: V =KSP55: 60VCEOKSP56: 80V• Collec ..
KSP55TA ,PNP Epitaxial Silicon TransistorKSP55/56KSP55/56Amplifier Transistor• Collector-Emitter Voltage: V =KSP55: 60VCEOKSP56: 80V• Collec ..
KSP56 ,PNP Epitaxial Silicon TransistorKSP55/56KSP55/56Amplifier Transistor• Collector-Emitter Voltage: V =KSP55: 60VCEOKSP56: 80V• Collec ..
KSP62 ,PNP Epitaxial Silicon Darlington TransistorKSP62/63/64KSP62/63/64Darlington Transistor• Collector-Emitter Voltage: V =KSP62: 20VCESKSP63/64: 3 ..
KSP76 ,PNP Epitaxial Silicon Darlington TransistorKSP75/76/77KSP75/76/77Darlington Transistor• Collector-Emitter Voltage: V = KSP75: 40VCESKSP76: 50V ..
KSP77 ,PNP Epitaxial Silicon Darlington TransistorKSP75/76/77KSP75/76/77Darlington Transistor• Collector-Emitter Voltage: V = KSP75: 40VCESKSP76: 50V ..
LA1175 ,FM Front End For Car Radio, Home Stereo ApplicationsFeatures• By using the keyed AGC system, which is effective inimproving the sensitivity suppression ..
LA1175M ,FM Front End For Car Radio, Home Stereo ApplicationsFeatures• By using the keyed AGC system, which is effective inimproving the sensitivity suppression ..
LA1177 ,Electronic Tuning-Use FM Front End for Car Radio, Home StereosOrdering number : EN2257BMonolithic Linear ICLA1177Electronic Tuning-Use FM Front Endfor Car Radio, ..
LA1178M ,FM Front End for Car Radio, Home Radio-UseFeatures• Excellent intermodulation characteristic (wide-band AGCcircuit)• On-chip local oscillatio ..
LA1180 ,MONOLITHIC LINEAR IC FM FRONT END FOR RADIO CASSETTE RECORDER USENo.1338c / LA1 180',l,t, MonoHFthic Linear TTdt _ FRONT ENDFOR R/uno-CASSETTE R tups UseThe LA11M i ..
LA1185 ,FM Front-end for Radio-cassette Recorder, Home Stereo ApplicationsOrdering number: EN1521DMonolithic Linear ICLA1185FM Front-end for Radio-cassette Recorder, HomeSte ..
KSP55-KSP55TA-KSP56
PNP Epitaxial Silicon Transistor
KSP55/56 KSP55/56 Amplifier Transistor • Collector-Emitter Voltage: V =KSP55: 60V CEO KSP56: 80V • Collector Power Dissipation: P (max) =625mW C • Complement to KSP05/06 TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage CBO : KSP55 -60 V : KSP56 -80 V V Collector-Emitter Voltage CEO : KSP55 -60 V : KSP56 -80 V V Emitter-Base Voltage -4 V CEO I Collector Current -500 mA C P Collector Power Dissipation 625 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units BV * Collector-Emitter Breakdown Voltage CEO : KSP55 I = -1mA, I =0 -60 V C B : KSP56 -80 BV Emitter-Base Breakdown Voltage I = -100μA, I =0 -4 V EBO E C I Collector Cut-off Current CBO : KSP55 V = -60V, I =0 -0.1 μA CB E : KSP56 V = -80V, I =0 -0.1 μA CB E I Collector Cut-off Current V = -60V, I =0 -0.1 μA CEO CE B 50 h DC Current Gain V = -1V, I = -10mA FE CE C V = -1V, I = -100mA 50 CE C V (sat) Collector-Emitter Saturation Voltage I = -100mA, I = -10mA -0.25 V CE C B V (on) Base-Emitter On Voltage V = -1V, I = -100mA -1.2 V BE CE C f Current Gain Bandwidth Product V = -2V, I = -10mA 50 MHz T CE C f=100MHz * Pulse Test: PW≤300μs, Duty Cycle≤2% ©2002 Rev. A2, September 2002
