KSP5179 ,NPN Epitaxial Silicon TransistorKSP5179KSP5179High Frequency TransistorTO-9211. Emitter 2. Base 3. CollectorNPN Epitaxial Silic ..
KSP55 ,PNP Epitaxial Silicon TransistorKSP55/56KSP55/56Amplifier Transistor• Collector-Emitter Voltage: V =KSP55: 60VCEOKSP56: 80V• Collec ..
KSP55 ,PNP Epitaxial Silicon TransistorKSP55/56KSP55/56Amplifier Transistor• Collector-Emitter Voltage: V =KSP55: 60VCEOKSP56: 80V• Collec ..
KSP55TA ,PNP Epitaxial Silicon TransistorKSP55/56KSP55/56Amplifier Transistor• Collector-Emitter Voltage: V =KSP55: 60VCEOKSP56: 80V• Collec ..
KSP55TA ,PNP Epitaxial Silicon TransistorKSP55/56KSP55/56Amplifier Transistor• Collector-Emitter Voltage: V =KSP55: 60VCEOKSP56: 80V• Collec ..
KSP56 ,PNP Epitaxial Silicon TransistorKSP55/56KSP55/56Amplifier Transistor• Collector-Emitter Voltage: V =KSP55: 60VCEOKSP56: 80V• Collec ..
LA1175 ,FM Front End For Car Radio, Home Stereo ApplicationsFeatures• By using the keyed AGC system, which is effective inimproving the sensitivity suppression ..
LA1175M ,FM Front End For Car Radio, Home Stereo ApplicationsFeatures• By using the keyed AGC system, which is effective inimproving the sensitivity suppression ..
LA1177 ,Electronic Tuning-Use FM Front End for Car Radio, Home StereosOrdering number : EN2257BMonolithic Linear ICLA1177Electronic Tuning-Use FM Front Endfor Car Radio, ..
LA1178M ,FM Front End for Car Radio, Home Radio-UseFeatures• Excellent intermodulation characteristic (wide-band AGCcircuit)• On-chip local oscillatio ..
LA1180 ,MONOLITHIC LINEAR IC FM FRONT END FOR RADIO CASSETTE RECORDER USENo.1338c / LA1 180',l,t, MonoHFthic Linear TTdt _ FRONT ENDFOR R/uno-CASSETTE R tups UseThe LA11M i ..
LA1185 ,FM Front-end for Radio-cassette Recorder, Home Stereo ApplicationsOrdering number: EN1521DMonolithic Linear ICLA1185FM Front-end for Radio-cassette Recorder, HomeSte ..
KSP5179
NPN Epitaxial Silicon Transistor
KSP5179 KSP5179 High Frequency Transistor TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 20 V CBO V Collector-Emitter Voltage 12 V CEO V Emitter-Base Voltage 2.5 V EBO I Collector Current 50 mA C P Collector Power Dissipation (T =25°C) 200 mW C a Derate above 25°C1.14mW/°C P Collector Power Dissipation (T =25°C) 300 mW C C Derate above 25°C1.71mW/°C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units V (sus) Collector-Emitter Sustaining Voltage I =3mA, I =0 12 V CEO C B BV Collector-Base Breakdown Voltage I =0.001mA, I =0 20 V CBO C E BV Emitter-Base Breakdown Voltage I =0.01, I =0 2.5 V EBO E C 0.02 μA I Collector Cut-off Current V =15V, I =0 CBO CB E V =15V, I =0, Ta=150°C 1 μA CB E h DC Current Gain V =1V, I =3mA 25 250 FE CB C V (sat) Collector-Emitter Saturation Voltage I =10mA, I =1mA 0.4 V CE C B V (sat) Base-Emitter Saturation Voltage I =10mA, I =1mA 1 V BE C B f Current Gain Bandwidth Product V =6V, I =5mA 900 2000 MHz T CE C C Output Capacitance V =10V, I =0, f=0.1 to1 MHz 1 pF ob CB E h Small Signal Current Gain V =6V, I =2mA, f=1KHz 25 300 fe CE C C Collector Base Time Constant V =6V, I =2mA, f=31.9MHz 3 14 ps c ⋅ rbb’ CE E NF Noise Figure V =6V, I =1.5mA, f=200MHz 4.5 dB CE C R =50Ω S G Power Gain V =6V, I =5mA, f=200MHz 15 dB PE CE C ©2001 Rev. A1, July 2001
