KSP44BU ,NPN Epitaxial Silicon TransistorKSP44/45KSP44/45High Voltage Transistor• Collector-Emitter Voltage: V =KSP44: 400VCEOKSP45: 350V• C ..
KSP44TA ,NPN Epitaxial Silicon TransistorKSP44/45KSP44/45High Voltage Transistor• Collector-Emitter Voltage: V =KSP44: 400VCEOKSP45: 350V• C ..
KSP45 ,NPN Epitaxial Silicon TransistorKSP44/45KSP44/45High Voltage Transistor• Collector-Emitter Voltage: V =KSP44: 400VCEOKSP45: 350V• C ..
KSP45 ,NPN Epitaxial Silicon TransistorKSP44/45KSP44/45High Voltage Transistor• Collector-Emitter Voltage: V =KSP44: 400VCEOKSP45: 350V• C ..
KSP5179 ,NPN Epitaxial Silicon TransistorKSP5179KSP5179High Frequency TransistorTO-9211. Emitter 2. Base 3. CollectorNPN Epitaxial Silic ..
KSP55 ,PNP Epitaxial Silicon TransistorKSP55/56KSP55/56Amplifier Transistor• Collector-Emitter Voltage: V =KSP55: 60VCEOKSP56: 80V• Collec ..
LA1150N ,FM IF Amplifier for Car RadioFeatures• Easy adjustment.• Large output voltage.• Good limiter characteristic.• Wide operating vol ..
LA1175 ,FM Front End For Car Radio, Home Stereo ApplicationsFeatures• By using the keyed AGC system, which is effective inimproving the sensitivity suppression ..
LA1175M ,FM Front End For Car Radio, Home Stereo ApplicationsFeatures• By using the keyed AGC system, which is effective inimproving the sensitivity suppression ..
LA1177 ,Electronic Tuning-Use FM Front End for Car Radio, Home StereosOrdering number : EN2257BMonolithic Linear ICLA1177Electronic Tuning-Use FM Front Endfor Car Radio, ..
LA1178M ,FM Front End for Car Radio, Home Radio-UseFeatures• Excellent intermodulation characteristic (wide-band AGCcircuit)• On-chip local oscillatio ..
LA1180 ,MONOLITHIC LINEAR IC FM FRONT END FOR RADIO CASSETTE RECORDER USENo.1338c / LA1 180',l,t, MonoHFthic Linear TTdt _ FRONT ENDFOR R/uno-CASSETTE R tups UseThe LA11M i ..
KSP44-KSP44BU-KSP44TA-KSP45
NPN Epitaxial Silicon Transistor
KSP44/45 KSP44/45 High Voltage Transistor • Collector-Emitter Voltage: V =KSP44: 400V CEO KSP45: 350V • Collector Power Dissipation: P (max)=625mW C TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage CBO : KSP44 500 V : KSP45 400 V V Collector-Emitter Voltage CEO : KSP44 400 V : KSP45 350 V V Emitter-Base Voltage 6 V EBO I Collector Current 300 mA C P Collector Power Dissipation (T =25°C) 625 mW C a P Collector Power Dissipation (T =25°C) 1.5 W C C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units BV Collector-Base Breakdown Voltage I =100μA, I =0 CBO C B : KSP44 500 V : KSP45 400 V BV * Collector -Emitter Breakdown Voltage I =1mA, I =0 CEO C B : KSP44 400 V : KSP45 350 V BV Emitter-Base Breakdown Voltage I =100μA, I =0 6 V EBO E C I Collector Cut-off Current CBO : KSP44 V =400V, I =0 0.1 μA CB E : KSP45 V =320V, I =0 0.1 μA CB E I Collector Cut-off Current CES : KSP44 V =400V, I =0 0.5 μA CE B : KSP45 V =320V, I =0 0.5 μA CE B I Emitter Cut-off Current V =4V, I =0 0.1 μA EBO EB C h * DC Current Gain V =10V, I =1mA 40 FE CE C V =10V, I =10mA 50 200 CE C V =10V, I =50mA 45 CE C V =10V, I =100mA 40 CE C V (sat) * Collector-Emitter Saturation Voltage I =1mA, I =0.1mA 0.4 V CE C B I =10mA, I =1mA 0.5 V C B I =50mA, I =5mA 0.75 V C B V (sat) * Base-Emitter Saturation Voltage I =10mA, I =1mA 0.75 V BE C B C Output Capacitance V =20V, I =0, f=1MHz 7 pF ob CB E * Pulse Test: PW≤300μs, Duty Cycle≤2% ©2002 Rev. A2, November 2002
