KSP43TA ,NPN Epitaxial Silicon TransistorKSP42/43KSP42/43High Voltage Transistor• Collector-Emitter Voltage: V =KSP42: 300VCEOKSP43: 200V• C ..
KSP44 ,NPN Epitaxial Silicon TransistorKSP44/45KSP44/45High Voltage Transistor• Collector-Emitter Voltage: V =KSP44: 400VCEOKSP45: 350V• C ..
KSP44BU ,NPN Epitaxial Silicon TransistorKSP44/45KSP44/45High Voltage Transistor• Collector-Emitter Voltage: V =KSP44: 400VCEOKSP45: 350V• C ..
KSP44TA ,NPN Epitaxial Silicon TransistorKSP44/45KSP44/45High Voltage Transistor• Collector-Emitter Voltage: V =KSP44: 400VCEOKSP45: 350V• C ..
KSP45 ,NPN Epitaxial Silicon TransistorKSP44/45KSP44/45High Voltage Transistor• Collector-Emitter Voltage: V =KSP44: 400VCEOKSP45: 350V• C ..
KSP45 ,NPN Epitaxial Silicon TransistorKSP44/45KSP44/45High Voltage Transistor• Collector-Emitter Voltage: V =KSP44: 400VCEOKSP45: 350V• C ..
LA1143 ,FM IF System for Car RadiosFeatures1. Versatile mutingsa) When muting operation is performed under a weak signal strength, an ..
LA1145 ,FM IF System (Quadrature Detector) for Car RadioOperating Characteristics at Ta = 25°C,V =8V,f = 10.7 MHzCC inParameter Symbol Conditions min typ m ..
LA1145M ,FM IF System (Quadrature Detector) for Car RadioOperating Characteristics at Ta = 25°C,V =8V,f = 10.7 MHzCC inParameter Symbol Conditions min typ m ..
LA1150N ,FM IF Amplifier for Car RadioFeatures• Easy adjustment.• Large output voltage.• Good limiter characteristic.• Wide operating vol ..
LA1175 ,FM Front End For Car Radio, Home Stereo ApplicationsFeatures• By using the keyed AGC system, which is effective inimproving the sensitivity suppression ..
LA1175M ,FM Front End For Car Radio, Home Stereo ApplicationsFeatures• By using the keyed AGC system, which is effective inimproving the sensitivity suppression ..
KSP43TA
NPN Epitaxial Silicon Transistor
KSP42/43 KSP42/43 High Voltage Transistor • Collector-Emitter Voltage: V =KSP42: 300V CEO KSP43: 200V • Collector Power Dissipation: P (max)=625mW C TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector Base Voltage CBO : KSP42 300 V : KSP43 200 V V Collector-Emitter Voltage CEO : KSP42 300 V : KSP43 200 V V Emitter-Base Voltage 6 V EBO I Collector Current 500 mA C P Collector Power Dissipation 625 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units BV Collector-Base Breakdown Voltage I =100μA, I =0 CBO C E : KSP42 300 V : KSP43 200 V BV * Collector -Emitter Breakdown Voltage I =1mA, I =0 CEO C B : KSP42 300 V : KSP43 200 V BV Emitter-Base Breakdown Voltage I =100μA, I =0 6 V EBO E C I Collector Cut-off Current CBO : KSP42 V =200V, I =0 100 nA CB E : KSP43 V =160V, I =0 100 nA CB E I Emitter Cut-off Current EBO : KSP42 V =6V, I =0 100 nA BE C : KSP43 V =4V, I =0 100 nA BE C h * DC Current Gain V =10V, I =1mA 25 FE CE C V =10V, I =10mA 40 CE C V =10V, I =30mA 40 CE C V (sat) * Collector-Emitter Saturation Voltage I =20mA, I =2mA 0.5 V CE C B V (sat) * Base-Emitter Saturation Voltage I =20mA, I =2mA 0.9 V BE C B C Output Capacitance V =20V, I =0 ob CB E : KSP42 f=1MHz 3 pF : KSP43 4 pF f Current Gain Bandwidth Product V =20V, I =10mA 50 MHz T CE C f=100MHz * Pulse Test: PW≤300μs, Duty Cycle≤2% ©2002 Rev. A2, September 2002
