KSP42 ,NPN Epitaxial Silicon TransistorKSP42/43KSP42/43High Voltage Transistor• Collector-Emitter Voltage: V =KSP42: 300VCEOKSP43: 200V• C ..
KSP43 ,NPN Epitaxial Silicon TransistorKSP42/43KSP42/43High Voltage Transistor• Collector-Emitter Voltage: V =KSP42: 300VCEOKSP43: 200V• C ..
KSP43 ,NPN Epitaxial Silicon TransistorKSP42/43KSP42/43High Voltage Transistor• Collector-Emitter Voltage: V =KSP42: 300VCEOKSP43: 200V• C ..
KSP43TA ,NPN Epitaxial Silicon TransistorKSP42/43KSP42/43High Voltage Transistor• Collector-Emitter Voltage: V =KSP42: 300VCEOKSP43: 200V• C ..
KSP44 ,NPN Epitaxial Silicon TransistorKSP44/45KSP44/45High Voltage Transistor• Collector-Emitter Voltage: V =KSP44: 400VCEOKSP45: 350V• C ..
KSP44BU ,NPN Epitaxial Silicon TransistorKSP44/45KSP44/45High Voltage Transistor• Collector-Emitter Voltage: V =KSP44: 400VCEOKSP45: 350V• C ..
LA1137N ,Am Tuners for Car Radios and Home StereosOrdering number: EN3507Monolithic Linear ICLA1136N, 1136NM, 1137N, 1137NMAM Tuners for Car Radios a ..
LA1137NM ,AM Tuners for Car Radios and Home StereosFeatures.The LA1136N/NM and LA1137N/NM are high-performance Excellent cross modulation characterist ..
LA1140 ,FM IF System for Car RadioOperating Characteristics at Ta = 25°C, V = 8 V, f = 10.7 MHz, See specified Test CircuitCCParamete ..
LA1143 ,FM IF System for Car RadiosFeatures1. Versatile mutingsa) When muting operation is performed under a weak signal strength, an ..
LA1145 ,FM IF System (Quadrature Detector) for Car RadioOperating Characteristics at Ta = 25°C,V =8V,f = 10.7 MHzCC inParameter Symbol Conditions min typ m ..
LA1145M ,FM IF System (Quadrature Detector) for Car RadioOperating Characteristics at Ta = 25°C,V =8V,f = 10.7 MHzCC inParameter Symbol Conditions min typ m ..
KSP42
NPN Epitaxial Silicon Transistor
KSP42/43 KSP42/43 High Voltage Transistor • Collector-Emitter Voltage: V =KSP42: 300V CEO KSP43: 200V • Collector Power Dissipation: P (max)=625mW C TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector Base Voltage CBO : KSP42 300 V : KSP43 200 V V Collector-Emitter Voltage CEO : KSP42 300 V : KSP43 200 V V Emitter-Base Voltage 6 V EBO I Collector Current 500 mA C P Collector Power Dissipation 625 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units BV Collector-Base Breakdown Voltage I =100μA, I =0 CBO C E : KSP42 300 V : KSP43 200 V BV * Collector -Emitter Breakdown Voltage I =1mA, I =0 CEO C B : KSP42 300 V : KSP43 200 V BV Emitter-Base Breakdown Voltage I =100μA, I =0 6 V EBO E C I Collector Cut-off Current CBO : KSP42 V =200V, I =0 100 nA CB E : KSP43 V =160V, I =0 100 nA CB E I Emitter Cut-off Current EBO : KSP42 V =6V, I =0 100 nA BE C : KSP43 V =4V, I =0 100 nA BE C h * DC Current Gain V =10V, I =1mA 25 FE CE C V =10V, I =10mA 40 CE C V =10V, I =30mA 40 CE C V (sat) * Collector-Emitter Saturation Voltage I =20mA, I =2mA 0.5 V CE C B V (sat) * Base-Emitter Saturation Voltage I =20mA, I =2mA 0.9 V BE C B C Output Capacitance V =20V, I =0 ob CB E : KSP42 f=1MHz 3 pF : KSP43 4 pF f Current Gain Bandwidth Product V =20V, I =10mA 50 MHz T CE C f=100MHz * Pulse Test: PW≤300μs, Duty Cycle≤2% ©2001 Rev. A1, July 2001
