KSP25 ,NPN Epitaxial Silicon Darlington TransistorKSP25/26/27KSP25/26/27Darlington Transistor• Collector-Emitter Voltage: V =KSP25: 40VCESKSP26: 50VK ..
KSP2907A ,PNP Epitaxial Silicon TransistorKSP2907AKSP2907AGeneral Purpose Transistor Collector-Emitter Voltage: V = 60VCEO Collector Power ..
KSP2907ABU ,PNP Epitaxial Silicon TransistorKSP2907AKSP2907AGeneral Purpose Transistor Collector-Emitter Voltage: V = 60VCEO Collector Power ..
KSP2907ATA ,PNP Epitaxial Silicon TransistorKSP2907AKSP2907AGeneral Purpose Transistor Collector-Emitter Voltage: V = 60VCEO Collector Power ..
KSP2907ATF ,PNP Epitaxial Silicon TransistorKSP2907AKSP2907AGeneral Purpose Transistor Collector-Emitter Voltage: V = 60VCEO Collector Power ..
KSP42 ,NPN Epitaxial Silicon TransistorKSP42/43KSP42/43High Voltage Transistor• Collector-Emitter Voltage: V =KSP42: 300VCEOKSP43: 200V• C ..
LA1135M ,AM Tuner System for Car Radios and Home StereosFeatures[LA1135M].Excellent cross modulation characteristics: Meets therequirements for preventing ..
LA1136N ,AM Tuners for Car Radios and Home StereosFeatures.The LA1136N/NM and LA1137N/NM are high-performance Excellent cross modulation characterist ..
LA1136N ,AM Tuners for Car Radios and Home StereosOrdering number: EN3507Monolithic Linear ICLA1136N, 1136NM, 1137N, 1137NMAM Tuners for Car Radios a ..
LA1137 ,AM Tuners for Car Radios and Home StereosOrdering number: EN3507Monolithic Linear ICLA1136N, 1136NM, 1137N, 1137NMAM Tuners for Car Radios a ..
LA1137N ,Am Tuners for Car Radios and Home StereosOrdering number: EN3507Monolithic Linear ICLA1136N, 1136NM, 1137N, 1137NMAM Tuners for Car Radios a ..
LA1137NM ,AM Tuners for Car Radios and Home StereosFeatures.The LA1136N/NM and LA1137N/NM are high-performance Excellent cross modulation characterist ..
KSP25
NPN Epitaxial Silicon Darlington Transistor
KSP25/26/27 KSP25/26/27 Darlington Transistor • Collector-Emitter Voltage: V =KSP25: 40V CES KSP26: 50V KSP27: 60V • Collector Power Dissipation: P (max) =625mW C TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Emitter Voltage CES : KSP25 40 V : KSP26 50 V : KSP27 60 V V Emitter-Base Voltage 10 V EBO I Collector Current 500 mA C P Collector Power Dissipation 625 mW C T Junction Temperature 150 °C J T Storage Temperature -55~150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units BV Collector-Emitter Breakdown Voltage I =100μA, I =0 CES C E : KSP25 40 V : KSP26 50 V : KSP27 60 V BV Collector-Base Breakdown Voltage I =100μA, I =0 CBO C E : KSP25 40 V : KSP26 50 V : KSP27 60 V I Collector Cut-off Current CBO : KSP25 V =30V, I =0 100 nA CE E : KSP26 V =40V, I =0 100 nA CE E : KSP27 V =50V, I =0 100 nA CE E I Emitter Cut-off Current V =10V, I =0 100 nA EBO EB B 10K h * DC Current Gain V =5V, I =10mA FE CE C V =5V, I =100mA 10K CE C V (sat) * Collector-Emitter Saturation Voltage I =100mA, I =0.1mA 1.5 V CE C B V (on) * Base-Emitter On Voltage V =5V, I =100mA 2 V BE CE C * Pulse Test: PW≤300μs, Duty Cycle≤2% ©2001 Rev. A1, June 2001
