KSP14 ,NPN Epitaxial Silicon Darlington TransistorKSP13/14KSP13/14Darlington Transistor• Collector-Emitter Voltage: V =30VCES• Collector Power Dissip ..
KSP14TA ,NPN Epitaxial Silicon Darlington TransistorKSP13/14KSP13/14Darlington Transistor• Collector-Emitter Voltage: V =30VCES• Collector Power Dissip ..
KSP2222 , General Purpose Transistor
KSP2222A ,NPN Epitaxial Silicon TransistorKSP2222AKSP2222AGeneral Purpose Transistor• Collector-Emitter Voltage: V = 40VCEO• Collector Power ..
KSP2222ABU ,NPN Epitaxial Silicon TransistorKSP2222AKSP2222AGeneral Purpose Transistor• Collector-Emitter Voltage: V = 40VCEO• Collector Power ..
KSP2222ATA ,NPN Epitaxial Silicon TransistorKSP2222AKSP2222AGeneral Purpose Transistor• Collector-Emitter Voltage: V = 40VCEO• Collector Power ..
LA1130 ,AM Tuner for Car RadioFeatures• Good space factor due to single-end package.• Easy to design printed circuit pattern due ..
LA1135 ,AM Tuner System for Car Radios and Home StereosOrdering number: EN1272EMonolithic Linear ICLA1135, 1135MAM Tuner System forCar Radios and Home Ste ..
LA1135M ,AM Tuner System for Car Radios and Home StereosFeatures[LA1135M].Excellent cross modulation characteristics: Meets therequirements for preventing ..
LA1136N ,AM Tuners for Car Radios and Home StereosFeatures.The LA1136N/NM and LA1137N/NM are high-performance Excellent cross modulation characterist ..
LA1136N ,AM Tuners for Car Radios and Home StereosOrdering number: EN3507Monolithic Linear ICLA1136N, 1136NM, 1137N, 1137NMAM Tuners for Car Radios a ..
LA1137 ,AM Tuners for Car Radios and Home StereosOrdering number: EN3507Monolithic Linear ICLA1136N, 1136NM, 1137N, 1137NMAM Tuners for Car Radios a ..
KSP14
NPN Epitaxial Silicon Darlington Transistor
KSP13/14 KSP13/14 Darlington Transistor • Collector-Emitter Voltage: V =30V CES • Collector Power Dissipation: P (max)=625mW C TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 30 V CBO V Collector-Emitter Voltage 30 V CES V Emitter-Base Voltage 10 V EBO I Collector Current 500 mA C P Collector Power Dissipation 625 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units BV Collector-Emitter Breakdown Voltage I =100μA, I =0 30 V CES C B I Collector Cut-off Current V =30V, I =0 100 nA CBO CB E I Emitter Cut-off Current V =10V, I =0 100 nA EBO EB C h * DC Current Gain FE : KSP13 V =5V, I =10mA 5K CE C : KSP14 10K : KSP13 V =5V, I =100mA 10K CE C : KSP14 20K V (sat) Collector-Emitter Saturation Voltage I =100mA, I =0.1mA 1.5 V CE C B V (on) Base-Emitter On Voltage V =5V, I =100mA 2.0 V BE CE C f Current Gain Bandwidth Product V =5V, I =10mA 125 MHz T CE C f=100MHz * Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% ©2001 Rev. A1, June 2001
