KSP12BU ,NPN Epitaxial Silicon Darlington TransistorKSP12KSP12Darlington Transistor• Collector-Emitter Voltage: V =20VCES• Collector Power Dissipation: ..
KSP12TA ,NPN Epitaxial Silicon Darlington TransistorKSP12KSP12Darlington Transistor• Collector-Emitter Voltage: V =20VCES• Collector Power Dissipation: ..
KSP13 ,NPN Epitaxial Silicon Darlington TransistorKSP13/14KSP13/14Darlington Transistor• Collector-Emitter Voltage: V =30VCES• Collector Power Dissip ..
KSP13BU ,NPN Epitaxial Silicon Darlington TransistorKSP13/14KSP13/14Darlington Transistor• Collector-Emitter Voltage: V =30VCES• Collector Power Dissip ..
KSP13TA ,NPN Epitaxial Silicon Darlington TransistorKSP13/14KSP13/14Darlington Transistor• Collector-Emitter Voltage: V =30VCES• Collector Power Dissip ..
KSP13-TA ,NPN Epitaxial Silicon Darlington TransistorKSP13/14KSP13/14Darlington Transistor• Collector-Emitter Voltage: V =30VCES• Collector Power Dissip ..
LA1060 ,Antenna Switching Diversity Circuit for Car-Use FM TunersElectrical Characteristics at Ta=25°C, V =8.0V, f=100kHz sine waveCCRatingsParameter Symbol Conditi ..
LA1060 ,Antenna Switching Diversity Circuit for Car-Use FM TunersFeatures• "Count system"-used, reliable detection of multipathdistortion.• One-tuner type diversity ..
LA1061 ,Antenna Switching ControllerOrdering number : EN3044AMonolithic Linear ICLA1061MAntenna Switching ControllerOverviewPackage Dim ..
LA1061M ,Antenna Switching ControllerBlock DiagramUnit (resistance : Ω)No.3044-2/8LA1061MOperating Characteristic Test CircuitUnit (resi ..
LA1061M ,Antenna Switching ControllerOrdering number : EN3044AMonolithic Linear ICLA1061MAntenna Switching ControllerOverviewPackage Dim ..
LA1061M ,Antenna Switching ControllerFeatures• Uses Sanyo's proprietary AGC amplifier and detector, providing accurate detection of mult ..
KSP12-KSP12BU-KSP12TA
NPN Epitaxial Silicon Darlington Transistor
KSP12 KSP12 Darlington Transistor • Collector-Emitter Voltage: V =20V CES • Collector Power Dissipation: P (max)=625mW C TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Emitter Voltage 20 V CES V Emitter-Base Voltage 10 V EBO P Collector Power Dissipation 625 mW C T Junction Temperature 150 °C J T Storage Temperature -55 ~ 150 °C STG Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Typ.... Max. Units BV Collector-Emitter Breakdown Voltage I =100μA, I =0 20 V CES C B I Collector Cut-off Current V =15V, I =0 100 nA CBO CB E I Collector Cut-off Current V =15V, I =0 100 nA CES CE B I Emitter Cut-off Current V =10V, I =0 100 nA EBO EC C h DC Current Gain V =5V, I =10mA 20K FE CE C V (sat) Collector-Emitter Saturation Voltage I =10mA, I =0.01mA 1 V CE C B V (on) Base-Emitter On Voltage V =5V, I =10mA 1.4 V BE CE C ©2002 Rev. A2, September 2002
