KSP10 ,NPN Epitaxial Silicon TransistorKSP10KSP10VHF/UHF transistorTO-9211. Base 2. Emitter 3. CollectorNPN Epitaxial Silicon Transist ..
KSP10TA ,NPN Epitaxial Silicon TransistorKSP10KSP10VHF/UHF transistorTO-9211. Base 2. Emitter 3. CollectorNPN Epitaxial Silicon Transist ..
KSP12 ,NPN Epitaxial Silicon Darlington TransistorKSP12KSP12Darlington Transistor• Collector-Emitter Voltage: V =20VCES• Collector Power Dissipation: ..
KSP12BU ,NPN Epitaxial Silicon Darlington TransistorKSP12KSP12Darlington Transistor• Collector-Emitter Voltage: V =20VCES• Collector Power Dissipation: ..
KSP12TA ,NPN Epitaxial Silicon Darlington TransistorKSP12KSP12Darlington Transistor• Collector-Emitter Voltage: V =20VCES• Collector Power Dissipation: ..
KSP13 ,NPN Epitaxial Silicon Darlington TransistorKSP13/14KSP13/14Darlington Transistor• Collector-Emitter Voltage: V =30VCES• Collector Power Dissip ..
LA-101VA , High efficiency, single-digit numeric displays
LA1060 ,Antenna Switching Diversity Circuit for Car-Use FM TunersElectrical Characteristics at Ta=25°C, V =8.0V, f=100kHz sine waveCCRatingsParameter Symbol Conditi ..
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LA1061 ,Antenna Switching ControllerOrdering number : EN3044AMonolithic Linear ICLA1061MAntenna Switching ControllerOverviewPackage Dim ..
LA1061M ,Antenna Switching ControllerBlock DiagramUnit (resistance : Ω)No.3044-2/8LA1061MOperating Characteristic Test CircuitUnit (resi ..
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KSP10
NPN Epitaxial Silicon Transistor
KSP10 KSP10 VHF/UHF transistor TO-92 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T =25°C unless otherwise noted a Symbol Parameter Value Units V Collector-Base Voltage 30 V CBO V Collector-Emitter Voltage 25 V CEO V Emitter-Base Voltage 3.0 V EBO P Collector Power Dissipation (T =25°C) 350 mW C a Derate above 25°C2.8mW/°C P Collector Power Dissipation (T =25°C) 1.0 W C C Derate above 25°C8.0W/°C T Junction Temperature 150 °C J T Storage Temperature -55~150 °C STG Rth(j-c) Thermal Resistance, Junction to Case 125 °C/W Rth(j-a) Thermal Resistance, Junction to Ambient 357 °C/W Electrical Characteristics T =25°C unless otherwise noted a Symbol Parameter Test Condition Min. Max. Units BV Collector-Base Breakdown Voltage I =100μA, I =0 30 V CBO C E BV Collector-Emitter Breakdown Voltage I =1mA, I =0 25 V CEO C B BV Emitter-Base Breakdown Voltage I =10μA, I =0 3.0 V EBO E C I Collector Cut-off Current V =25V, I =0 100 nA CBO CB E I Emitter Cut-off Current V =2V, I =0 100 nA EBO EB C h DC Current Gain V =10V, I =4mA 60 FE CE C V (sat) Collector-Emitter Saturation Voltage I =4mA, I =0.4mA 0.5 V CE C B V (on) Base-Emitter On Voltage V =10V, I =4mA 0.95 V BE CE C f Current Gain Bandwidth Product V =10V, I =4mA, f=100MHz 650 MHz T CE C C Output Capacitance V =10V, I =0, f=1MHz 0.7 pF ob CB E C Collector Base Feedback Capacitance V =10V, I =0, f=1MHz 0.35 0.65 pF rb CB E C Collector Base Time Constant V =10V, I =4mA, 9.0 ps c·rbb´ CB C f=31.8MHz * Pulse Test: PW≤300μs, Duty Cycle≤2% ©2001 Rev. A1, June 2001
